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IRGP4063-EPBF

Infineon Technologies IRGP4063-EPBF

Part Number:
IRGP4063-EPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497079-IRGP4063-EPBF
Description:
IGBT 600V 96A 330W TO247AD
ECAD Model:
Datasheet:
IRGP4063-EPBF

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Specifications
Infineon Technologies IRGP4063-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4063-EPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    330W
  • Number of Elements
    1
  • Rise Time-Max
    56ns
  • Element Configuration
    Single
  • Power Dissipation
    330W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.14V
  • Max Collector Current
    96A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.65V
  • Turn On Time
    100 ns
  • Test Condition
    400V, 48A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.14V @ 15V, 48A
  • Turn Off Time-Nom (toff)
    210 ns
  • IGBT Type
    Trench
  • Gate Charge
    95nC
  • Current - Collector Pulsed (Icm)
    144A
  • Td (on/off) @ 25°C
    60ns/145ns
  • Switching Energy
    625μJ (on), 1.28mJ (off)
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    46ns
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.13mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRGP4063-EPBF Description
IRGP4063-EPBF, manufactured by Infineon Technologies. Its category belongs to IGBT Transistors. It is applied to many fields, like Communications equipment Datacom modules Enterprise systems Enterprise projectors Personal electronics Portable electronics . And the main parameters of this part is IGBT Transistors 600V 96A. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).

IRGP4063-EPBF Features
Square RBSOA
Lead-Free Package
Low switching losses
5 μS short circuit SOA
Tight parameter distribution
100% of the parts tested for ILM
Low VCE (ON) Trench IGBT Technology
Maximum Junction temperature 175 °C
Positive VCE (ON) Temperature coefficient

IRGP4063-EPBF Applications
Enterprise systems
Personal electronics
Communications equipment 
IRGP4063-EPBF More Descriptions
Trans IGBT Chip N-CH 600V 96A 3-Pin(3 Tab) TO-247AD Tube
600V UltraFast Trench IGBT in a TO-247 package
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD
IGBT W/ULTRAFAST SOFT RECOVERY D
French Electronic Distributor since 1988
CAP CER 0.033UF 50V X7R RADIAL
Product Comparison
The three parts on the right have similar specifications to IRGP4063-EPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Number of Elements
    Rise Time-Max
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Power - Max
    Gate-Emitter Voltage-Max
    REACH SVHC
    Factory Lead Time
    Qualification Status
    View Compare
  • IRGP4063-EPBF
    IRGP4063-EPBF
    Infineon Technologies
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    330W
    1
    56ns
    Single
    330W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    2.14V
    96A
    TO-247AD
    600V
    1.65V
    100 ns
    400V, 48A, 10 Ω, 15V
    2.14V @ 15V, 48A
    210 ns
    Trench
    95nC
    144A
    60ns/145ns
    625μJ (on), 1.28mJ (off)
    6.5V
    46ns
    20.7mm
    15.87mm
    5.13mm
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4640-EPBF
    IRGP4640-EPBF
    Infineon Technologies
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    -
    EAR99
    Insulated Gate BIP Transistors
    250W
    -
    -
    Single
    -
    -
    Standard
    -
    N-CHANNEL
    1.9V
    65A
    -
    600V
    1.6V
    -
    400V, 24A, 10 Ω, 15V
    1.9V @ 15V, 24A
    -
    -
    75nC
    72A
    40ns/105ns
    100μJ (on), 600μJ (off)
    6.5V
    40ns
    -
    -
    -
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    IRGP4640
    250W
    20V
    No SVHC
    -
    -
    IRGP4063-EPBF vs IRGP4640-EPBF
  • IRGP4269DPBF
    IRGP4269DPBF
    Infineon Technologies
    -
    -
    -
    -
    -
    -
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRGP4063-EPBF vs IRGP4269DPBF
  • IRGP4069-EPBF
    IRGP4069-EPBF
    Infineon Technologies
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    268W
    1
    42ns
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.85V
    76A
    TO-247AD
    600V
    1.6V
    78 ns
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    188 ns
    Trench
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    6.5V
    54ns
    -
    -
    -
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    268W
    20V
    No SVHC
    14 Weeks
    Not Qualified
    IRGP4063-EPBF vs IRGP4069-EPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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