IRGP4062D-EPBF

Infineon Technologies IRGP4062D-EPBF

Part Number:
IRGP4062D-EPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497126-IRGP4062D-EPBF
Description:
IGBT 600V 48A 250W TO247AD
ECAD Model:
Datasheet:
IRG(B,P)4062DPbF(-EPbF)

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Specifications
Infineon Technologies IRGP4062D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4062D-EPBF.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AD
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Input Type
    Standard
  • Power - Max
    250W
  • Reverse Recovery Time
    89ns
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    48A
  • Test Condition
    400V, 24A, 10Ohm, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 24A
  • IGBT Type
    Trench
  • Gate Charge
    75nC
  • Current - Collector Pulsed (Icm)
    72A
  • Td (on/off) @ 25°C
    41ns/104ns
  • Switching Energy
    115μJ (on), 600μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
IRGP4062D-EPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRGP4062D-EPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRGP4062D-EPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRGP4062D-EPBF More Descriptions
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD
Target Applications: Pump; Solar; UPS; Welding
IGBT Transistors 600V UltraFast IGBT 5uS 24A 1.65 VCE
Product Comparison
The three parts on the right have similar specifications to IRGP4062D-EPBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Input Type
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Mount
    Number of Pins
    Published
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    REACH SVHC
    Factory Lead Time
    Transistor Element Material
    Number of Terminations
    Subcategory
    Qualification Status
    Number of Elements
    Rise Time-Max
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Radiation Hardening
    Lead Free
    View Compare
  • IRGP4062D-EPBF
    IRGP4062D-EPBF
    Through Hole
    TO-247-3
    TO-247AD
    -55°C~175°C TJ
    Tube
    Obsolete
    3 (168 Hours)
    Standard
    250W
    89ns
    600V
    48A
    400V, 24A, 10Ohm, 15V
    1.95V @ 15V, 24A
    Trench
    75nC
    72A
    41ns/104ns
    115μJ (on), 600μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4630DPBF
    Through Hole
    TO-247-3
    -
    -40°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    Standard
    -
    100 ns
    -
    47A
    400V, 18A, 22 Ω, 15V
    1.95V @ 15V, 18A
    -
    35nC
    54A
    40ns/105ns
    95μJ (on), 350μJ (off)
    RoHS Compliant
    Through Hole
    3
    2012
    EAR99
    206W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    1.95V
    30A
    600V
    1.65V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4069-EPBF
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    Standard
    268W
    -
    -
    -
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    Trench
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    RoHS Compliant
    Through Hole
    3
    2011
    EAR99
    268W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    1.85V
    76A
    600V
    1.6V
    No SVHC
    14 Weeks
    SILICON
    3
    Insulated Gate BIP Transistors
    Not Qualified
    1
    42ns
    COLLECTOR
    POWER CONTROL
    N-CHANNEL
    TO-247AD
    78 ns
    188 ns
    20V
    6.5V
    54ns
    -
    -
  • IRGP4262D-EPBF
    Through Hole
    TO-247-3
    -
    -40°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    Standard
    250W
    170 ns
    -
    -
    400V, 24A, 10 Ω, 15V
    2.1V @ 15V, 24A
    -
    70nC
    96A
    24ns/73ns
    520μJ (on), 240μJ (off)
    RoHS Compliant
    Through Hole
    3
    2013
    EAR99
    250W
    -
    -
    Single
    2.1V
    60A
    650V
    1.7V
    No SVHC
    15 Weeks
    -
    -
    Insulated Gate BIP Transistors
    -
    -
    45ns
    -
    -
    N-CHANNEL
    -
    -
    -
    20V
    7.7V
    40ns
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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