Infineon Technologies IRG4RC20FTRLPBF
- Part Number:
- IRG4RC20FTRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497080-IRG4RC20FTRLPBF
- Description:
- IGBT 600V 22A 66W DPAK
- Datasheet:
- IRG4RC20FTRLPBF
Infineon Technologies IRG4RC20FTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4RC20FTRLPBF.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRG4RC20FPBF
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Input TypeStandard
- Power - Max66W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-252AA
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)22A
- Turn On Time51 ns
- Test Condition480V, 12A, 50 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
- Turn Off Time-Nom (toff)706 ns
- Gate Charge27nC
- Current - Collector Pulsed (Icm)44A
- Td (on/off) @ 25°C26ns/194ns
- Switching Energy190μJ (on), 920μJ (off)
- RoHS StatusRoHS Compliant
IRG4RC20FTRLPBF Description
The IRG4RC20FTRLPBF is a fast speed IGBT. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRG4RC20FTRLPBF Features
Industry standard TO-252AA package
Combines very low VCE(on) with low switching losses
Lead-Free
Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching. >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs
IRG4RC20FTRLPBF Applications
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.
The IRG4RC20FTRLPBF is a fast speed IGBT. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRG4RC20FTRLPBF Features
Industry standard TO-252AA package
Combines very low VCE(on) with low switching losses
Lead-Free
Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching. >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs
IRG4RC20FTRLPBF Applications
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.
IRG4RC20FTRLPBF More Descriptions
600V FAST 1-8 KHZ SINGLE IGBT IN A D-PAK PACKAGE | Infineon IRG4RC20FTRLPBF
Trans IGBT Chip N-CH 600V 22A 3-Pin(2 Tab) DPAK T/R
SINGLE IGBT, 600V, 22A; Transistor Type:IGBT; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:3000 ;RoHS Compliant: Yes
FIXED IND 1.5NH 650MA 100 MOHM
Trans IGBT Chip N-CH 600V 22A 3-Pin(2 Tab) DPAK T/R
SINGLE IGBT, 600V, 22A; Transistor Type:IGBT; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:3000 ;RoHS Compliant: Yes
FIXED IND 1.5NH 650MA 100 MOHM
The three parts on the right have similar specifications to IRG4RC20FTRLPBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusCase ConnectionReverse Recovery TimeMountNumber of PinsPbfree CodeMax Power DissipationElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningAdditional FeatureView Compare
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IRG4RC20FTRLPBF13 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING260compliant30IRG4RC20FPBFR-PSSO-G2Not Qualified1SINGLEStandard66WPOWER CONTROLN-CHANNELTO-252AA600V22A51 ns480V, 12A, 50 Ω, 15V2.1V @ 15V, 12A706 ns27nC44A26ns/194ns190μJ (on), 920μJ (off)RoHS Compliant--------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)2-MATTE TINSINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEStandard49WPOWER CONTROLN-CHANNEL-600V14A37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)Non-RoHS CompliantCOLLECTOR28ns-----------
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11 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)2000-Obsolete1 (Unlimited)2EAR99--GULL WING---IRG4BC30S-SPBFR-PSSO-G2-1-Standard100WPOWER CONTROLN-CHANNEL---40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)RoHS CompliantCOLLECTOR-Surface Mount3yes100WSingle1.6V34A600V600VNo-
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-Through HoleTO-220-3NOSILICON-55°C~150°C TJTube2000-Obsolete1 (Unlimited)3--SINGLE-NOT SPECIFIED-NOT SPECIFIED-R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEStandard60WPOWER CONTROLN-CHANNELTO-220AB600V16A63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)Non-RoHS CompliantCOLLECTOR37ns----------ULTRA FAST SOFT RECOVERY
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