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IRG4PF50WPBF

Infineon Technologies IRG4PF50WPBF

Part Number:
IRG4PF50WPBF
Manufacturer:
Infineon Technologies
Ventron No:
2854856-IRG4PF50WPBF
Description:
IGBT 900V 51A 200W TO247AC
ECAD Model:
Datasheet:
IRG4PF50WPBF

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Specifications
Infineon Technologies IRG4PF50WPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PF50WPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    200W
  • Terminal Position
    SINGLE
  • Current Rating
    51A
  • Number of Elements
    1
  • Element Configuration
    Dual
  • Power Dissipation
    200W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    29 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    26ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    110 ns
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    51A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    900V
  • Collector Emitter Saturation Voltage
    2.25V
  • Turn On Time
    54 ns
  • Test Condition
    720V, 28A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 28A
  • Turn Off Time-Nom (toff)
    370 ns
  • Gate Charge
    160nC
  • Current - Collector Pulsed (Icm)
    204A
  • Td (on/off) @ 25°C
    29ns/110ns
  • Switching Energy
    190μJ (on), 1.06mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    220ns
  • Height
    20.3mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRG4PF50WPBF Description
IRG4PF50WPBF belongs to the family of IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. It is optimized for use in welding and switch-mode power supply applications. It is able to deliver lower conduction and switching losses, tighter parameter distribution, and exceptional reliability. Minimal minority-carrier recombination and low on-state losses are used to achieve maximum flexibility in device application.

IRG4PF50WPBF Features
Tighter parameter distribution 
Higher efficiency
Low conduction losses
High switching speed
Available in the TO-247AC package

IRG4PF50WPBF Applications
Rail transit
Smart grid
Aerospace
Electric vehicles 
New energy equipment
IRG4PF50WPBF More Descriptions
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3 Tab) TO-247AC Tube
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
Product Comparison
The three parts on the right have similar specifications to IRG4PF50WPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Terminal Form
    Base Part Number
    JESD-30 Code
    Power - Max
    Max Breakdown Voltage
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • IRG4PF50WPBF
    IRG4PF50WPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    3
    Through Hole
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    600V
    200W
    SINGLE
    51A
    1
    Dual
    200W
    COLLECTOR
    Standard
    29 ns
    POWER CONTROL
    26ns
    N-CHANNEL
    110 ns
    2.7V
    51A
    TO-247AC
    900V
    2.25V
    54 ns
    720V, 28A, 5 Ω, 15V
    2.7V @ 15V, 28A
    370 ns
    160nC
    204A
    29ns/110ns
    190μJ (on), 1.06mJ (off)
    20V
    6V
    220ns
    20.3mm
    15.875mm
    5.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC30S-STRLP
    IRG4BC30S-STRLP
    Infineon Technologies
    11 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    -
    100W
    -
    -
    1
    Single
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    1.6V
    34A
    -
    600V
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    -
    -
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    -
    yes
    GULL WING
    IRG4BC30S-SPBF
    R-PSSO-G2
    100W
    600V
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4PF50WPBF vs IRG4BC30S-STRLP
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    3
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    TO-220AB
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    R-PSFM-T3
    49W
    -
    NO
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    28ns
    600V
    14A
    IRG4PF50WPBF vs IRG4BC15UD
  • IRG4BC20FD
    IRG4BC20FD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    SINGLE
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    TO-220AB
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    R-PSFM-T3
    60W
    -
    NO
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    37ns
    600V
    16A
    IRG4PF50WPBF vs IRG4BC20FD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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