Infineon Technologies IRG4PC40WPBF
- Part Number:
- IRG4PC40WPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587158-IRG4PC40WPBF
- Description:
- IGBT 600V 40A 160W TO247AC
- Datasheet:
- IRG4PC40WPBF
Infineon Technologies IRG4PC40WPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC40WPBF.
- Factory Lead Time14 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2004
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max160W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-247AC
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)40A
- Power Dissipation-Max (Abs)160W
- Turn On Time48 ns
- Test Condition480V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Turn Off Time-Nom (toff)294 ns
- Gate Charge98nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C27ns/100ns
- Switching Energy110μJ (on), 230μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Fall Time-Max (tf)110ns
- RoHS StatusROHS3 Compliant
IRG4PC40WPBF Description
Infineon IRG4PC40WPBF is a 3-pin through-hole IGBT packaged in TO-247AC. IRG4PC40WPBF IGBTs designed for medium frequency applications with a fast response which provides the user with the highest efficiency available. IRG4PC40WPBF utilizes FRED diodes optimized to provide the best performance with IGBTs
IRG4PC40WPBF Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Lead-Free
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
IRG4PC40WPBF Applications Microwave Oven
Large Solenoids
Tesla Coils
High Voltage, a high current switching device
Induction Heating
Converters or Inverter circuits
IRG4PC40WPBF Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Lead-Free
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
IRG4PC40WPBF Applications Microwave Oven
Large Solenoids
Tesla Coils
High Voltage, a high current switching device
Induction Heating
Converters or Inverter circuits
IRG4PC40WPBF More Descriptions
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3 Tab) TO-247AC Tube
Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25
IRG4PC40 Series 600 V 20 A N-Channel Latest-Generation IGBT - TO-247AC
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.5 V Current release time: 124 ns Power dissipation: 160 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 40A; Current Temperature: 25°C; Fall Time Max: 124ns; Fall Time tf: 124ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 160W; Pulsed Current Icm: 160A; Rise Time: 23ns; Transistor Polarity: N Channel; Transistor Type: IGBT
Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25
IRG4PC40 Series 600 V 20 A N-Channel Latest-Generation IGBT - TO-247AC
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.5 V Current release time: 124 ns Power dissipation: 160 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 40A; Current Temperature: 25°C; Fall Time Max: 124ns; Fall Time tf: 124ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 160W; Pulsed Current Icm: 160A; Rise Time: 23ns; Transistor Polarity: N Channel; Transistor Type: IGBT
The three parts on the right have similar specifications to IRG4PC40WPBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)RoHS StatusReverse Recovery TimeJESD-609 CodeTerminal FinishTerminal FormSupplier Device PackageView Compare
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IRG4PC40WPBF14 WeeksThrough HoleTO-247-3NOSILICON-55°C~150°C TJTube2004Last Time Buy1 (Unlimited)3EAR99LOW CONDUCTION LOSSInsulated Gate BIP TransistorsSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLECOLLECTORStandard160WPOWER CONTROLN-CHANNELTO-247AC600V40A160W48 ns480V, 20A, 10 Ω, 15V2.5V @ 15V, 20A294 ns98nC160A27ns/100ns110μJ (on), 230μJ (off)20V6V110nsROHS3 Compliant------
-
-Through HoleTO-220-3NOSILICON-55°C~150°C TJTube2001Obsolete1 (Unlimited)3-ULTRA FAST SOFT RECOVERY-SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard49WPOWER CONTROLN-CHANNELTO-220AB600V14A-37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)---Non-RoHS Compliant28ns----
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)2EAR99-Insulated Gate BIP TransistorsSINGLE26030R-PSSO-G2-1SINGLECOLLECTORStandard100WPOWER CONTROLN-CHANNEL-600V34A100W40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)20V6V590nsNon-RoHS Compliant-e3Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING-
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTube2000Obsolete1 (Unlimited)------------Standard60W---600V16A--480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)---Non-RoHS Compliant----D2PAK
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