IRG4PC40WPBF

Infineon Technologies IRG4PC40WPBF

Part Number:
IRG4PC40WPBF
Manufacturer:
Infineon Technologies
Ventron No:
3587158-IRG4PC40WPBF
Description:
IGBT 600V 40A 160W TO247AC
ECAD Model:
Datasheet:
IRG4PC40WPBF

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Specifications
Infineon Technologies IRG4PC40WPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC40WPBF.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    160W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-247AC
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    40A
  • Power Dissipation-Max (Abs)
    160W
  • Turn On Time
    48 ns
  • Test Condition
    480V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    294 ns
  • Gate Charge
    98nC
  • Current - Collector Pulsed (Icm)
    160A
  • Td (on/off) @ 25°C
    27ns/100ns
  • Switching Energy
    110μJ (on), 230μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    110ns
  • RoHS Status
    ROHS3 Compliant
Description
IRG4PC40WPBF Description Infineon IRG4PC40WPBF is a 3-pin through-hole IGBT packaged in TO-247AC. IRG4PC40WPBF IGBTs designed for medium frequency applications with a fast response which provides the user with the highest efficiency available. IRG4PC40WPBF utilizes FRED diodes optimized to provide the best performance with IGBTs
IRG4PC40WPBF Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Lead-Free
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
IRG4PC40WPBF Applications Microwave Oven
Large Solenoids
Tesla Coils
High Voltage, a high current switching device
Induction Heating
Converters or Inverter circuits
IRG4PC40WPBF More Descriptions
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3 Tab) TO-247AC Tube
Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25
IRG4PC40 Series 600 V 20 A N-Channel Latest-Generation IGBT - TO-247AC
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.5 V Current release time: 124 ns Power dissipation: 160 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 40A; Current Temperature: 25°C; Fall Time Max: 124ns; Fall Time tf: 124ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 160W; Pulsed Current Icm: 160A; Rise Time: 23ns; Transistor Polarity: N Channel; Transistor Type: IGBT
Product Comparison
The three parts on the right have similar specifications to IRG4PC40WPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Reverse Recovery Time
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Supplier Device Package
    View Compare
  • IRG4PC40WPBF
    IRG4PC40WPBF
    14 Weeks
    Through Hole
    TO-247-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE
    COLLECTOR
    Standard
    160W
    POWER CONTROL
    N-CHANNEL
    TO-247AC
    600V
    40A
    160W
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD
    -
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    3
    -
    ULTRA FAST SOFT RECOVERY
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    TO-220AB
    600V
    14A
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    Non-RoHS Compliant
    28ns
    -
    -
    -
    -
  • IRG4BC30S-S
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Insulated Gate BIP Transistors
    SINGLE
    260
    30
    R-PSSO-G2
    -
    1
    SINGLE
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    34A
    100W
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    590ns
    Non-RoHS Compliant
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    -
  • IRG4BC20K-S
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    60W
    -
    -
    -
    600V
    16A
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    D2PAK
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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