Infineon Technologies IRG4PC40KDPBF

Name: IRG4PC40KDPBF
Brand: Infineon Technologies
SKU: 2494362-IRG4PC40KDPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4PC40KDPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2494362-IRG4PC40KDPBF

Description:: IGBT 600V 42A 160W TO247AC

ECAD Model:

Datasheet:: IRG4PC40KDPBF

Specifications

Infineon Technologies IRG4PC40KDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PC40KDPBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Current Rating
42A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
53 ns
Transistor Application
POWER CONTROL
Rise Time
37ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
110 ns
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
42A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
89 ns
Test Condition
480V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 25A
Turn Off Time-Nom (toff)
360 ns
Gate Charge
120nC
Current - Collector Pulsed (Icm)
84A
Td (on/off) @ 25°C
53ns/110ns
Switching Energy
950μJ (on), 760μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
150ns
Height
20.2946mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with a soft recovery diode that operates at ultrafast speeds. It is designed for high operating frequencies of >5kHz and has a short-circuit rating of 10μs at 125°C with VGE = 15V. The generation 4 IGBT design is more efficient and has a narrower parameter distribution than the generation 3 design. For usage in bridge designs, the IGBT comes with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. The IGBT performance of the HEXFREDTM diodes was optimized. Snubbing is required less or not at all for reduced recovery characteristics.

Features
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Short Circuit Rated UltraFast: Optimized for high operating frequencies ＞5.0 kHz, and Short Circuit Rated to 10μs @125°C， VGE=15V
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package
Lead-Free

Applications
Power Management
Sensing & Instrumentation
Consumer Electronics
Alternative Energy
Maintenance & Repair

IRG4PC40KDPBF More Descriptions

Trans IGBT Chip N-CH 600V 42A 160000mW 3-Pin(3 Tab) TO-247AC Tube
IRG4P Series Ultrafast Soft Recovery Diode Through Hole IGBT - TO-247-3
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 140 ns Power dissipation: 160 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:42A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, 600V, 42A, TO-247AC; Transistor Type:IGBT; DC Collector Current:42A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:42A; Current Temperature:25°C; Fall Time Max:150ns; Fall Time Typ:140ns; Fall Time tf:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:84A; Rise Time:37ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to IRG4PC40KDPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Surface Mount

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

View Compare
IRG4PC40KDPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

2000

Last Time Buy

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

600V

160W

42A

1

Single

160W

COLLECTOR

Standard

53 ns

POWER CONTROL

37ns

N-CHANNEL

110 ns

2.6V

42A

42 ns

TO-247AC

600V

2.1V

89 ns

480V, 25A, 10 Ω, 15V

2.6V @ 15V, 25A

360 ns

120nC

84A

53ns/110ns

950μJ (on), 760μJ (off)

20V

6V

150ns

20.2946mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC10SD-L

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

2001

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

28ns

-

-

-

-

480V, 8A, 100 Ω, 15V

1.8V @ 15V, 8A

-

15nC

18A

76ns/815ns

310μJ (on), 3.28mJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

38W

600V

14A

-

-

-

-

-

-

-

-

IRG4PC40KDPBF vs IRG4BC10SD-L
IRG4BC15UD

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~150°C TJ

Tube

2001

Obsolete

1 (Unlimited)

3

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

28ns

TO-220AB

-

-

37 ns

480V, 7.8A, 75 Ω, 15V

2.4V @ 15V, 7.8A

400 ns

23nC

42A

17ns/160ns

240μJ (on), 260μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

49W

600V

14A

NO

ULTRA FAST SOFT RECOVERY

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

IRG4PC40KDPBF vs IRG4BC15UD
IRG4BC20FD

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

3

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

37ns

TO-220AB

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

60W

600V

16A

NO

ULTRA FAST SOFT RECOVERY

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

IRG4PC40KDPBF vs IRG4BC20FD

Certification

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IRG4PC40KDPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 42A 3-Pin(3 Tab) TO-247A	10652	5 $3.6187 125 $3.1954
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 42A 3-Pin(3 Tab) TO-247A	2075	25 $3.32
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT 600V 42A 160W TO247AC RoHS: Compliant	5325	1 $6.25 25 $5.3108 100 $4.6026 500 $3.91808 1000 $3.30441
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT Chip	10652	1 $7.41 10 $6.01 50 $4.54 200 $4.19 500 $3.22 1000 $3
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 42A 3-Pin(3 Tab) TO-247A RoHS: Compliant	0	4000 $3.09 4050 $2.99 8050 $2.79 20000 $2.69 40000 $2.69
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 42A 3-Pin(3 Tab) TO-247A RoHS: Compliant	0	1 $3.09 10 $2.79 25 $2.69 50 $2.59 100 $2.49 500 $2.39 1000 $2.29
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT, 600V, 42A, TO-247AC, DC Collector Current:4	3998	1 $5.95 10 $5.06 25 $4.84 50 $4.61 100 $4.39 250 $4.16 500 $3.74
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	600V Ultrafast 8-25 kHz COPACK IGBT IN A TO-247AC RoHS: Compliant	0	4000 $3.941
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 42A I(C), 600V RoHS: Compliant	440	1 $3.51 25 $3.26 100 $3.13 500 $3 1000 $2.85
IRG4PC40KDPBF DISTI #	International Rectifier	RoHS: Not Compliant	1577	1 $3.51 25 $3.26 100 $3.13 500 $3 1000 $2.85
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IG RoHS: Compliant	3698	1 $5.95 10 $5.06 100 $4.39 250 $4.16 500 $3.74 1000 $3.15 2500 $2.99
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IRG4PC40KDPBF Series 600 25 A V N-Channel UltraFas RoHS: Compliant	3440	5 $3.69 25 $3.12 50 $3.01 100 $2.91 250 $2.77
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 42A TO247AC, TU	703	10 $3.23 20 $3.14 50 $3.02 250 $2.95
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 42A TO247AC, EA	175	1 $4.78 10 $3.23 20 $3.14 50 $3.02 250 $2.95
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	Transistor: IGBT, 600V, 25A, 160W, TO247-3	76	1 $5.5 3 $5.04 10 $4.04 50 $3.62
IRG4PC40KDPBF DISTI #	International Rectifier	RoHS: Compliant	1960
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT TO-247 RoHS: Compliant	0	4000 $2.99
IRG4PC40KDPBF DISTI #	International Rectifier	Insulated Gate Bipolar Transistor, 42AI(C),600VV(B RoHS: Compliant	1
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	InsulatedGateBipolarTransistor,42AI(C),600VV(BR)CE RoHS: Compliant	2315	50 $4.92 2315 $4.61
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	600V 42A 160W TO247AC RoHS: Compliant	145	5 $4.35 25 $3.35 100 $2.85 200 $2.6
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT, 600V, 42A, TO-247AC RoHS: Compliant	4026	1 $5.42 10 $3.42 100 $3.38 250 $3.34 500 $3.21
IRG4PC40KDPBF DISTI #	Infineon Technologies AG	IGBT, 600V, 42A, TO-247AC RoHS: Compliant	3998	1 $9.42 10 $8.02 100 $6.96 250 $6.59 500 $5.93 1000 $4.99 2500 $4.74

IRG4PC4~~(20)~~
IRG4PC~~(62)~~
IRG4P~~(68)~~
IRG4~~(110)~~
IRG~~(110)~~

Infineon Technologies IRG4PC40KDPBF

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