Infineon Technologies IRG4IBC20KDPBF

Name: IRG4IBC20KDPBF
Brand: Infineon Technologies
SKU: 3587226-IRG4IBC20KDPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4IBC20KDPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3587226-IRG4IBC20KDPBF

Description:: IGBT 600V 11.5A 34W TO220FP

ECAD Model:

Datasheet:: IRG4IBC20KDPBF

Specifications

Infineon Technologies IRG4IBC20KDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4IBC20KDPBF.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.299997g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
34W
Current Rating
11.5A
Number of Elements
1
Element Configuration
Single
Power Dissipation
34W
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
POWER CONTROL
Rise Time
34ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.8V
Max Collector Current
11.5A
Reverse Recovery Time
37 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.8V
Turn On Time
88 ns
Test Condition
480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 9A
Turn Off Time-Nom (toff)
380 ns
Gate Charge
34nC
Current - Collector Pulsed (Icm)
23A
Td (on/off) @ 25°C
54ns/180ns
Switching Energy
340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
110ns
Height
9.02mm
Length
10.67mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRG4IBC20KDPBF Description
IRG4IBC20KDPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. Generation 4 IGBTs offer the highest efficiencies available maximizing the power density of the system. IGBTs optimized for specific application conditions. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise EMI. The IRG4IBC20KDPBF is designed to exceed the power handling capability of equivalent industry-standard IGBTs.

IRG4IBC20KDPBF Features
High switching speed optimized for up to 25kHz with low VcE(on) Short Circuit Rating 10μs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry-standard TO-220 FULL PACK Lead-Free

IRG4IBC20KDPBF Applications
Automotive Advanced driver assistance systems (ADAS) Enterprise systems Datacenter & enterprise computing Personal electronics Home theater & entertainment

IRG4IBC20KDPBF More Descriptions

600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak package, FULLPAK220-3COPAK, RoHSInfineon SCT
Trans IGBT Chip N-CH 600V 11.5A 3-Pin(3 Tab) TO-220 Full-Pak - Rail/Tube
Target Applications: Dryer; Fan; Lighting HID; Pump; Solar; UPS; Washing Machine; Welding
Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.5A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes
IGBT, SINGLE, 600V, 11.5A, TO220FP-3; DC Collector Current: 11.5A; Collector Emitter Saturation Voltage Vce(on): 3.01V; Power Dissipation Pd: 34W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No.

Product Comparison

The three parts on the right have similar specifications to IRG4IBC20KDPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Rise Time

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Form

Base Part Number

JESD-30 Code

Power - Max

Max Breakdown Voltage

Surface Mount

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Supplier Device Package

View Compare
IRG4IBC20KDPBF

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.299997g

SILICON

-55°C~150°C TJ

Tube

2003

Last Time Buy

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

600V

34W

11.5A

1

Single

34W

ISOLATED

Standard

POWER CONTROL

34ns

N-CHANNEL

2.8V

11.5A

37 ns

TO-220AB

600V

2.8V

88 ns

480V, 9A, 50 Ω, 15V

2.8V @ 15V, 9A

380 ns

34nC

23A

54ns/180ns

340μJ (on), 300μJ (off)

20V

6V

110ns

9.02mm

10.67mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC30S-STRLP

Infineon Technologies

11 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

EAR99

-

-

100W

-

1

Single

-

COLLECTOR

Standard

POWER CONTROL

-

N-CHANNEL

1.6V

34A

-

-

600V

-

40 ns

480V, 18A, 23 Ω, 15V

1.6V @ 15V, 18A

1550 ns

50nC

68A

22ns/540ns

260μJ (on), 3.45mJ (off)

-

-

-

-

-

-

-

No

RoHS Compliant

-

yes

GULL WING

IRG4BC30S-SPBF

R-PSSO-G2

100W

600V

-

-

-

-

-

-

-

-

-

-

IRG4IBC20KDPBF vs IRG4BC30S-STRLP
IRG4BC15UD

Infineon Technologies

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

2001

Obsolete

1 (Unlimited)

3

-

-

-

-

-

1

-

-

COLLECTOR

Standard

POWER CONTROL

-

N-CHANNEL

-

-

28ns

TO-220AB

-

-

37 ns

480V, 7.8A, 75 Ω, 15V

2.4V @ 15V, 7.8A

400 ns

23nC

42A

17ns/160ns

240μJ (on), 260μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

R-PSFM-T3

49W

-

NO

ULTRA FAST SOFT RECOVERY

SINGLE

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

SINGLE WITH BUILT-IN DIODE

600V

14A

-

IRG4IBC20KDPBF vs IRG4BC15UD
IRG4BC20K-S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

-

-

480V, 9A, 50Ohm, 15V

2.8V @ 15V, 9A

-

34nC

32A

28ns/150ns

150μJ (on), 250μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

60W

-

-

-

-

-

-

-

-

600V

16A

D2PAK

IRG4IBC20KDPBF vs IRG4BC20K-S