Infineon Technologies IRG4BC40FPBF

Name: IRG4BC40FPBF
Brand: Infineon Technologies
SKU: 2494705-IRG4BC40FPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4BC40FPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2494705-IRG4BC40FPBF

Description:: IGBT 600V 49A 160W TO220AB

ECAD Model:

Datasheet:: IRG4BC40FPBF

Specifications

Infineon Technologies IRG4BC40FPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC40FPBF.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
FAST SWITCHING
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Terminal Position
SINGLE
Current Rating
49A
Number of Elements
1
Element Configuration
Dual
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
26 ns
Transistor Application
POWER CONTROL
Rise Time
18ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
240 ns
Collector Emitter Voltage (VCEO)
1.7V
Max Collector Current
49A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
46 ns
Test Condition
480V, 27A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 27A
Turn Off Time-Nom (toff)
690 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
196A
Td (on/off) @ 25°C
26ns/240ns
Switching Energy
370μJ (on), 1.81mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
8.77mm
Length
10.54mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRG4BC40FPBF Description
Infineon Technologies manufactures the IRG4BC40FPBF, a 600V Ultrafast 1 to 8kHz IGBT. Process for hard switching with a medium operating frequency. In comparison to Generation 3, the Generation 4 IGBT design has a narrower parameter distribution and improved efficiency. It can be utilized in industrial, alternative energy, and power management, according to the IRG4BC40FPBF datasheet.

IRG4BC40FPBF Features
Lead-free
Industry-standard TO-220AB package
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Fast: optimized for medium operating frequencies(1-5 kHz hard switching, ＞20kHz in resonant mode).

IRG4BC40FPBF Applications
Industrial
Alternative Energy
Power Management

IRG4BC40FPBF More Descriptions

Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3 Tab) TO-220AB Tube
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3 Tab) TO-220AB
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHSInfineon SCT
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to IRG4BC40FPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Power - Max

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Fall Time-Max (tf)

View Compare
IRG4BC40FPBF

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3

3

6.000006g

SILICON

-55°C~150°C TJ

Tube

2000

Last Time Buy

1 (Unlimited)

3

Through Hole

EAR99

FAST SWITCHING

Insulated Gate BIP Transistors

600V

160W

SINGLE

49A

1

Dual

160W

COLLECTOR

Standard

26 ns

POWER CONTROL

18ns

N-CHANNEL

240 ns

1.7V

49A

TO-220AB

600V

1.7V

46 ns

480V, 27A, 10 Ω, 15V

1.7V @ 15V, 27A

690 ns

100nC

196A

26ns/240ns

370μJ (on), 1.81mJ (off)

20V

6V

8.77mm

10.54mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC15UD-STRL

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2001

Obsolete

1 (Unlimited)

2

-

-

-

-

-

-

SINGLE

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

-

-

-

37 ns

480V, 7.8A, 75 Ω, 15V

2.4V @ 15V, 7.8A

400 ns

23nC

42A

17ns/160ns

240μJ (on), 260μJ (off)

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

MATTE TIN

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

49W

28ns

600V

14A

-

IRG4BC40FPBF vs IRG4BC15UD-STRL
IRG4BC20FD-STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

-

-

-

-

-

-

SINGLE

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

-

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

MATTE TIN OVER NICKEL

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60W

37ns

600V

16A

-

IRG4BC40FPBF vs IRG4BC20FD-STRR
IRG4BC40W-SPBF

Infineon Technologies

8 Weeks

Surface Mount, Through Hole

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

SILICON

-55°C~150°C TJ

Tube

2004

Last Time Buy

1 (Unlimited)

2

-

EAR99

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

600V

160W

SINGLE

40A

1

Dual

160W

COLLECTOR

Standard

27 ns

POWER CONTROL

23ns

N-CHANNEL

100 ns

2.5V

40A

-

600V

2.05V

48 ns

480V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

294 ns

98nC

160A

27ns/100ns

110μJ (on), 230μJ (off)

20V

6V

4.83mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

-

-

-

-

-

-

110ns

IRG4BC40FPBF vs IRG4BC40W-SPBF

Certification

Related parts for IRG4BC40FPBF

IRG4BC30F-S

Infineon Technologies

IGBT 600V 31A 100W D2PAK
IRG4BC10SD-L

Infineon Technologies

IGBT 600V 14A 38W TO262
IRG4BC15UD-STRL

Infineon Technologies

IGBT 600V 14A 49W D2PAK
IRG4BC30S-STRLP

Infineon Technologies

IGBT 600V 34A 100W D2PAK
IRG4BC15UD

Infineon Technologies

IGBT 600V 14A 49W TO220AB
IRG4BC20FD-STRR

Infineon Technologies

IGBT 600V 16A 60W D2PAK
IRG4BC30S-S

Infineon Technologies

IGBT 600V 34A 100W D2PAK
IRG4BC40W-SPBF

Infineon Technologies

IGBT 600V 40A 160W D2PAK
IRG4BC20K-S

Infineon Technologies

IGBT 600V 16A 60W D2PAK
IRG4BC20FD

Infineon Technologies

IGBT 600V 16A 60W TO220AB

Popular Search Part Number Related Keywords Search Tags

IRG4BC40FPBF Price
IRG4BC40FPBF Picture
IRG4BC40FPBF Buy
IRG4BC40FPBF Distributor
IRG4BC40FPBF Image
IRG4BC40FPBF Inquiry
IRG4BC40FPBF Manufacturer
IRG4BC40FPBF Part
IRG4BC40FPBF Description
IRG4BC40FPBF Technical Data
IRG4BC40FPBF Stock
IRG4BC40FPBF Wholesales
IRG4BC40FPBF PDF
IRG4BC40FPBF Inventory
IRG4BC40FPBF Supplier
IRG4BC40FPBF Datasheet
IRG4BC40FPBF Rfq
IRG4BC40FPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRG4BC40FPBF DISTI #32706964	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3 Tab RoHS: Compliant	5965	19 $3.3875
IRG4BC40FPBF DISTI #23822380	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3 Tab RoHS: Compliant	94	10 $2.3328 100 $2.1504
IRG4BC40FPBF DISTI #IRG4BC40FPBF-ND	Infineon Technologies AG	IGBT 600V 49A 160W TO220AB RoHS: Compliant	3345	1 $4.08 10 $3.667 100 $3.0045 500 $2.55768 1000 $2.15708
IRG4BC40FPBF DISTI #V36:1790_13892144	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3 Tab RoHS: Compliant	0	1 $3.575 10 $3.097 100 $2.724 250 $2.593 500 $2.264 1000 $1.962
IRG4BC40FPBF DISTI #SP001533672	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 3-Pin(3 Tab) TO-220A RoHS: Compliant	250	1 $3.19 10 $2.41 100 $2.09 250 $1.98 500 $1.77 1000 $1.43
IRG4BC40FPBF DISTI #IRG4BC40FPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 3-Pin(3 Tab) TO-220A	0	177 $1.79 179 $1.69 356 $1.59 885 $1.59 1770 $1.59
IRG4BC40FPBF DISTI #IRG4BC40FPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0	3000 $2.03314 5000 $1.95972 8000 $1.88889 15000 $1.82536 30000 $1.79288
IRG4BC40FPBF DISTI #IRG4BC40FPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0	1000 $2.01571 2000 $1.95972 3000 $1.90676 5000 $1.85658 10000 $1.83247 25000 $1.80897 50000 $1.78608
IRG4BC40FPBF DISTI #97K2286	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 49A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0
IRG4BC40FPBF DISTI #97K2286	Infineon Technologies AG	IGBT Single Transistor, 49 A, 1.85 V, 160 W, 600 V	15965	1 $2.65 10 $2.43 25 $2.43 50 $2.43 100 $2.24 250 $2.24 500 $2.24
IRG4BC40FPBF. DISTI #27AC6927	Infineon Technologies AG	DC Collector Current:49A, Collector Emitter Satur	0	1 $3.88 10 $3.3 25 $3.15 50 $3.01 100 $2.86 250 $2.71 500 $2.43
IRG4BC40FPBF DISTI #70017066	Infineon Technologies AG	IGBT, Fast Speed, 600 V, 27 A, TO-220AB RoHS: Compliant	0	3000 $5.44
IRG4BC40FPBF DISTI #942-IRG4BC40FPBF	Infineon Technologies AG	IGBT Transistors 600V Fast 1-8kHz RoHS: Compliant	2633	1 $3.88 10 $3.3 100 $2.86 250 $2.71 500 $2.43 1000 $2.05 2000 $1.95
IRG4BC40FPBF DISTI #	International Rectifier	Insulated Gate Bipolar Transistor, 49A I(C), 600V RoHS: Compliant	2494	1 $2.04 25 $1.9 100 $1.82 500 $1.75 1000 $1.66
IRG4BC40FPBF DISTI #5412436	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 49A TO220AB, EA	202	1 $3.38 10 $2.07 20 $1.98
IRG4BC40FPBF DISTI #	International Rectifier		50
IRG4BC40FPBF DISTI #	International Rectifier		52
IRG4BC40FPBF DISTI #IRG4BC40FPBF	Infineon Technologies AG	Transistor: IGBT, 600V, 49A, 160W, TO220AB	20	1 $3.24 3 $2.92 10 $2.45 50 $2.16
IRG4BC40FPBF DISTI #	International Rectifier	RoHS: Compliant	2000
IRG4BC40FPBF DISTI #IRG4BC40FPBF	Infineon Technologies AG	600V 49A 160W TO220AB RoHS: Compliant	50	10 $2.12 50 $1.82 100 $1.72 200 $1.58
IRG4BC40FPBF DISTI #9105018	Infineon Technologies AG	IGBT, TO-220 RoHS: Compliant	10061	1 $5.85 10 $4.97 100 $4.31 250 $4.08 500 $3.66
IRG4BC40FPBF DISTI #9105018	Infineon Technologies AG	IGBT, TO-220 RoHS: Compliant	10041	1 $3.46 10 $2.62 100 $2.26 250 $2.15 500 $1.93

IRG4BC4~~(18)~~
IRG4BC~~(110)~~
IRG4B~~(110)~~
IRG4~~(110)~~
IRG~~(110)~~

Infineon Technologies IRG4BC40FPBF

Quick Request Quote

Get to Know the IRFB7545PBF Power MOSFET

A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors

W25Q128JVSIQ Footprint, Features and Package

TDA7560 Audio Power Amplifier: Symbol, Features and Application