Vishay Siliconix IRFRC20PBF

Name: IRFRC20PBF
Brand: Vishay Siliconix
SKU: 2478792-IRFRC20PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFRC20PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2478792-IRFRC20PBF

Description:: MOSFET N-CH 600V 2A DPAK

ECAD Model:

Datasheet:: IRFRC20PBF

Specifications

Vishay Siliconix IRFRC20PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFRC20PBF.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
4.4Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 42W Tc
Element Configuration
Single
Power Dissipation
2.5W
Turn On Delay Time
10 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
23ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
2A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
600V
Input Capacitance
350pF
Recovery Time
580 ns
Drain to Source Resistance
4.4Ohm
Rds On Max
4.4 Ω
Nominal Vgs
4 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFRC20PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 350pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 4.4Ohm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFRC20PBF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)

IRFRC20PBF Applications
There are a lot of Vishay Siliconix
IRFRC20PBF applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IRFRC20PBF More Descriptions

Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; On Resistance Rds(On):4.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 4.4 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

Product Comparison

The three parts on the right have similar specifications to IRFRC20PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRFRC20PBF

Vishay Siliconix

8 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

D-Pak

1.437803g

-55°C~150°C TJ

Tube

1997

Active

1 (Unlimited)

4.4Ohm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

2.5W Ta 42W Tc

Single

2.5W

10 ns

N-Channel

4.4Ohm @ 1.2A, 10V

4V @ 250μA

350pF @ 25V

2A Tc

18nC @ 10V

23ns

600V

10V

±20V

25 ns

30 ns

2A

4V

20V

600V

350pF

580 ns

4.4Ohm

4.4 Ω

4 V

2.39mm

6.73mm

6.22mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFR024NTRRPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-

Tape & Reel (TR)

2004

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

45W Tc

-

-

-

N-Channel

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

SILICON

HEXFET®

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

175°C

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

17A

0.075Ohm

68A

55V

71 mJ

IRFRC20PBF vs IRFR024NTRRPBF
IRFR12N25DCTRLP

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

D-Pak

-

-55°C~175°C TJ

Tape & Reel (TR)

2001

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

144W Tc

-

-

-

N-Channel

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFRC20PBF vs IRFR12N25DCTRLP
IRFR12N25DCTRRP

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

D-Pak

-

-55°C~175°C TJ

Tape & Reel (TR)

2001

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

144W Tc

-

-

-

N-Channel

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFRC20PBF vs IRFR12N25DCTRRP