Vishay Siliconix IRFR9310TRPBF
- Part Number:
- IRFR9310TRPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478874-IRFR9310TRPBF
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Datasheet:
- IRFR9310TRPBF
Vishay Siliconix IRFR9310TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9310TRPBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance7Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Voltage400V
- Power Dissipation-Max50W Tc
- Element ConfigurationSingle
- Current18A
- Power Dissipation50W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.8A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)1.8A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance270pF
- Drain to Source Resistance7Ohm
- Rds On Max7 Ω
- Nominal Vgs-2 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFR9310TRPBF Overview
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR9310TRPBF Features
a continuous drain current (ID) of 1.8A
the turn-off delay time is 25 ns
single MOSFETs transistor is 7Ohm
a 400V drain to source voltage (Vdss)
IRFR9310TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9310TRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR9310TRPBF Features
a continuous drain current (ID) of 1.8A
the turn-off delay time is 25 ns
single MOSFETs transistor is 7Ohm
a 400V drain to source voltage (Vdss)
IRFR9310TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9310TRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR9310TRPBF More Descriptions
Single P-Channel 400 V 7 Ohms Surface Mount Power Mosfet - TO-252
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2 Tab) DPAK T/R
MOSFET, P-CH, 400V, 1.8A, TO-252;
P Channel Mosfet, -400V, 1.8A D-Pak, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:50W Rohs Compliant: No |Vishay IRFR9310TRPBF.
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2 Tab) DPAK T/R
MOSFET, P-CH, 400V, 1.8A, TO-252;
P Channel Mosfet, -400V, 1.8A D-Pak, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:50W Rohs Compliant: No |Vishay IRFR9310TRPBF.
The three parts on the right have similar specifications to IRFR9310TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR9310TRPBF8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)2013Active1 (Unlimited)7Ohm150°C-55°CMOSFET (Metal Oxide)11400V50W TcSingle18A50W11 nsP-Channel7Ohm @ 1.1A, 10V4V @ 250μA270pF @ 25V1.8A Tc13nC @ 10V10ns400V10V±20V24 ns25 ns1.8A20V270pF7Ohm7 Ω-2 V2.39mm6.73mm6.22mmUnknownNoROHS3 CompliantLead Free----------------------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----Tape & Reel (TR)2004Discontinued1 (Unlimited)---MOSFET (Metal Oxide)1--48W Tc----N-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Tc25nC @ 10V-100V10V±20V-------------ROHS3 Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified175°CSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA9.4A0.21Ohm38A100V91 mJ
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---144W Tc----N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-----------------HEXFET®------------------------
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)---25W Tc----N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A----------Non-RoHS Compliant----------------------------
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