IRFR9310TRPBF

Vishay Siliconix IRFR9310TRPBF

Part Number:
IRFR9310TRPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478874-IRFR9310TRPBF
Description:
MOSFET P-CH 400V 1.8A DPAK
ECAD Model:
Datasheet:
IRFR9310TRPBF

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Specifications
Vishay Siliconix IRFR9310TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9310TRPBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    7Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    400V
  • Power Dissipation-Max
    50W Tc
  • Element Configuration
    Single
  • Current
    18A
  • Power Dissipation
    50W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    7Ohm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    270pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    1.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    270pF
  • Drain to Source Resistance
    7Ohm
  • Rds On Max
    7 Ω
  • Nominal Vgs
    -2 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFR9310TRPBF Overview
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFR9310TRPBF Features
a continuous drain current (ID) of 1.8A
the turn-off delay time is 25 ns
single MOSFETs transistor is 7Ohm
a 400V drain to source voltage (Vdss)


IRFR9310TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9310TRPBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR9310TRPBF More Descriptions
Single P-Channel 400 V 7 Ohms Surface Mount Power Mosfet - TO-252
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2 Tab) DPAK T/R
MOSFET, P-CH, 400V, 1.8A, TO-252;
P Channel Mosfet, -400V, 1.8A D-Pak, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:50W Rohs Compliant: No |Vishay IRFR9310TRPBF.
Product Comparison
The three parts on the right have similar specifications to IRFR9310TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR9310TRPBF
    IRFR9310TRPBF
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    Active
    1 (Unlimited)
    7Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    400V
    50W Tc
    Single
    18A
    50W
    11 ns
    P-Channel
    7Ohm @ 1.1A, 10V
    4V @ 250μA
    270pF @ 25V
    1.8A Tc
    13nC @ 10V
    10ns
    400V
    10V
    ±20V
    24 ns
    25 ns
    1.8A
    20V
    270pF
    7Ohm
    7 Ω
    -2 V
    2.39mm
    6.73mm
    6.22mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR120NTRRPBF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -
    Tape & Reel (TR)
    2004
    Discontinued
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    -
    48W Tc
    -
    -
    -
    -
    N-Channel
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Tc
    25nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    9.4A
    0.21Ohm
    38A
    100V
    91 mJ
  • IRFR12N25DTRPBF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR010TRR
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    25W Tc
    -
    -
    -
    -
    N-Channel
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    50V
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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