Vishay Siliconix IRFR9220TR
- Part Number:
- IRFR9220TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853287-IRFR9220TR
- Description:
- MOSFET P-CH 200V 3.6A DPAK
- Datasheet:
- IRFR9220TR
Vishay Siliconix IRFR9220TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9220TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.5Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-3.6A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time8.8 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds340pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.6A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time7.3 ns
- Continuous Drain Current (ID)3.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Input Capacitance340pF
- Drain to Source Resistance1.5Ohm
- Rds On Max1.5 Ω
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR9220TR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 340pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.6A amps.In this device, the drain-source breakdown voltage is -200V and VGS=-200V, so the drain-source breakdown voltage is -200V in this case.It is [7.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.5Ohm.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFR9220TR Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 7.3 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFR9220TR Applications
There are a lot of Vishay Siliconix
IRFR9220TR applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 340pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.6A amps.In this device, the drain-source breakdown voltage is -200V and VGS=-200V, so the drain-source breakdown voltage is -200V in this case.It is [7.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.5Ohm.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFR9220TR Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 7.3 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFR9220TR Applications
There are a lot of Vishay Siliconix
IRFR9220TR applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFR9220TR More Descriptions
Trans MOSFET P-CH 200V 3.6A 3-Pin(2 Tab) DPAK T/R
MOSFET P-CHANNEL 200V
MOSFET P-CHANNEL 200V
The three parts on the right have similar specifications to IRFR9220TR.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR9220TRSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)1.5Ohm150°C-55°C-200VMOSFET (Metal Oxide)-3.6A112.5W Ta 42W TcSingle2.5W8.8 nsP-Channel1.5Ohm @ 2.2A, 10V4V @ 250μA340pF @ 25V3.6A Tc20nC @ 10V27ns200V10V±20V19 ns7.3 ns3.6A20V-200V340pF1.5Ohm1.5 Ω2.39mm6.73mm6.22mmNon-RoHS CompliantContains Lead----------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----Tape & Reel (TR)2004Discontinued1 (Unlimited)----MOSFET (Metal Oxide)-1-45W Tc---N-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-55V10V±20V-----------ROHS3 Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°CSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---144W Tc---N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V---------------HEXFET®------------------------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)----MOSFET (Metal Oxide)---25W Tc---N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A--------Non-RoHS Compliant----------------------------
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