IRFR9220

Vishay Siliconix IRFR9220

Part Number:
IRFR9220
Manufacturer:
Vishay Siliconix
Ventron No:
3071491-IRFR9220
Description:
MOSFET P-CH 200V 3.6A DPAK
ECAD Model:
Datasheet:
IRFR9220

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Specifications
Vishay Siliconix IRFR9220 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9220.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 42W Tc
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    8.8 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    340pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    27ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    7.3 ns
  • Continuous Drain Current (ID)
    3.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Input Capacitance
    340pF
  • Drain to Source Resistance
    1.5Ohm
  • Rds On Max
    1.5 Ω
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • RoHS Status
    Non-RoHS Compliant
Description
IRFR9220 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 340pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 7.3 ns.This device has a drain-to-source resistance of 1.5Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFR9220 Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 7.3 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRFR9220 Applications
There are a lot of Vishay Siliconix
IRFR9220 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFR9220 More Descriptions
Trans MOSFET P-CH 200V 3.6A 3-Pin (2 Tab) DPAK
N-CHANNEL MOSFET -3.6A -200V 1
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-3.6A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D-PAK ;RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRFR9220.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Series
    View Compare
  • IRFR9220
    IRFR9220
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    1.437803g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    2.5W Ta 42W Tc
    Single
    2.5W
    8.8 ns
    P-Channel
    1.5Ohm @ 2.2A, 10V
    4V @ 250μA
    340pF @ 25V
    3.6A Tc
    20nC @ 10V
    27ns
    200V
    10V
    ±20V
    19 ns
    7.3 ns
    3.6A
    20V
    -200V
    340pF
    1.5Ohm
    1.5 Ω
    2.39mm
    6.73mm
    6.22mm
    Non-RoHS Compliant
    -
    -
  • IRFR12N25DCTRLP
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    D-Pak
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
  • IRFR12N25DTRRP
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
  • IRFR010TRR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    25W Tc
    -
    -
    -
    N-Channel
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    50V
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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