Infineon Technologies IRFR9120NPBF

Name: IRFR9120NPBF
Brand: Infineon Technologies
SKU: 2479678-IRFR9120NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR9120NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479678-IRFR9120NPBF

Description:: MOSFET P-CH 100V 6.6A DPAK

ECAD Model:

Datasheet:: IRFR9120NPBF

Specifications

Infineon Technologies IRFR9120NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR9120NPBF.

Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
40W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
480m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.6A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
6.6A
Drain-source On Resistance-Max
0.48Ohm
Pulsed Drain Current-Max (IDM)
26A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
100 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR9120NPBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to provide exceptionally low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. For through-hole mounting uses, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFR9120NPBF Features
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9120N)
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated

IRFR9120NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRFR9120NPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.6A;D-Pak (TO-252AA);PD 40W
Transistor MOSFET P Channel 100 Volt 6.6 Amp 3 Pin 2 Tab Dpak
Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252AA
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -100V, -6.5A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:40W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-6.6A; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:DPAK; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:26A; SMD Marking:IRFR9120N; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V

Product Comparison

The three parts on the right have similar specifications to IRFR9120NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Mount

Continuous Drain Current (ID)

Voltage - Rated DC

Current Rating

Rise Time

Lead Free

View Compare
IRFR9120NPBF

Infineon Technologies

20 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1998

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

8541.29.00.95

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

40W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

480m Ω @ 3.9A, 10V

4V @ 250μA

350pF @ 25V

6.6A Tc

27nC @ 10V

100V

10V

±20V

TO-252AA

6.6A

0.48Ohm

26A

100V

100 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-
IRFR12N25DCTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

D-Pak

-

-

-

-

-

-

IRFR9120NPBF vs IRFR12N25DCTRRP
IRFR010TRR

Vishay Siliconix

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

Surface Mount

8.2A

-

-

-

-

IRFR9120NPBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-

Surface Mount

14A

150V

14A

26ns

Contains Lead

IRFR9120NPBF vs IRFR13N15DTR

Certification

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IRFR9120NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR9120NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2 Tab) DPAK Tube RoHS: Compliant	2243	1 $0.6791 10 $0.5806 100 $0.3976 1000 $0.3168 3000 $0.279 9000 $0.2692 24000 $0.2602
IRFR9120NTRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant	1609	1 $0.96 10 $0.845 100 $0.6604 500 $0.49948 1000 $0.40753
IRFR9120NTRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant	1609	1 $0.96 10 $0.845 100 $0.6604 500 $0.49948 1000 $0.40753
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant	121	1 $1.02 10 $0.897 100 $0.7019 500 $0.53038 1000 $0.43239
IRFR9120NTRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant	0	2000 $0.36218
IRFR9120NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2 Tab) DPAK Tube RoHS: Compliant	17199	3000 $0.2469 6000 $0.2378 12000 $0.2297 18000 $0.2217 30000 $0.2177
IRFR9120NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2 Tab) DPAK Tube RoHS: Compliant	2243	29 $0.5806 100 $0.3976 1000 $0.3168
IRFR9120NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2 Tab) DPAK (Alt RoHS: Compliant	55865	1 $0.4239 10 $0.3939 25 $0.3929 50 $0.3919 100 $0.2799 500 $0.2789 1000 $0.2579
IRFR9120NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2 Tab) DPAK (Alt RoHS: Compliant	0
IRFR9120NPBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -100V, 6.6A D-PAK, Transistor P	6	1 $0.841 10 $0.702 100 $0.467 500 $0.425 1000 $0.382 5000 $0.329 10000 $0.318
IRFR9120NPBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS , ROHS COMPLIANT: YES	0
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.48O RoHS: Compliant	0	1 $0.751 10 $0.662 100 $0.577 500 $0.5 1000 $0.442
IRFR9120NPBF DISTI #	Infineon Technologies AG	Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET Power RoHS: Compliant	2126	40 $0.31 400 $0.29 2000 $0.26
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFET 20V -100V P-CH FET 480mOhms 18nC RoHS: Compliant	67	1 $0.8 10 $0.661 100 $0.426 1000 $0.341 3000 $0.288 9000 $0.277 24000 $0.267
IRFR9120NPBF DISTI #	INTLRECT		495
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 100V 6.6A DPAK, EA	999	1 $2 25 $0.5 50 $0.43 100 $0.4 250 $0.37
IRFR9120NPBF DISTI #	Infineon Technologies AG	Transistor: P-MOSFET, unipolar, -100V, -6.5A,	434	1 $0.647 3 $0.4037 10 $0.3286 75 $0.282
IRFR9120NPBF DISTI #	Infineon Technologies AG	P-CH 100V 6,5A 480mOhm DPAK RoHS: Compliant	1200	75 $0.342 225 $0.3224 450 $0.3029 1125 $0.2736 2625 $0.2638
IRFR9120NPBF DISTI #	INF	RoHS: Compliant	75	2100 $0.4364
IRFR9120NPBF DISTI #	Infineon Technologies AG	PowerField-EffectTransistor,6.6AI(D),100V,0.48ohm, RoHS: Compliant	2457	375 $0.62 2457 $0.5636
IRFR9120NPBF DISTI #	Infineon Technologies AG	P-Ch 100V 6,6A 40W 0,48R TO252AA RoHS: Compliant	4725	75 $0.2775 150 $0.2375 300 $0.2175 600 $0.2095
IRFR9120NTRLPBF DISTI #	Infineon Technologies AG	P-Ch 100V 6,6A 40W 0,48R TO252AA RoHS: Compliant	8350	50 $0.2585 100 $0.2185 500 $0.1985 3000 $0.191
IRFR9120NPBF DISTI #		INSTOCK	900
IRFR9120NPBF DISTI #	International Rectifier	INSTOCK	900
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFET, P, -100V, -6.5A, D-PAK RoHS: Compliant	40	5 $0.563 25 $0.418 100 $0.322 250 $0.287 500 $0.253
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFET, P, -100V, -6.5A, D-PAK RoHS: Compliant	40	1 $1.28 10 $1.05 100 $0.675 1000 $0.54 3000 $0.456 9000 $0.438 24000 $0.423
IRFR9120NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2 Tab) DPAK Tube RoHS: Compliant	969	10 $0.242 50 $0.228
IRFR9120NPBF DISTI #	Infineon Technologies AG	MOSFETs	15290	5 $1.43 25 $0.574 50 $0.522 100 $0.465 500 $0.383 1000 $0.351
IRFR9120NPBF DISTI #	MISC HE-G	MOSFET P-CH 100V 6.6A DPAK INFINEON TECHNOLOGIES	75	1 $2.1949 75 $2.1948

IRFR912~~(21)~~
IRFR91~~(29)~~
IRFR9~~(64)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR9120NPBF

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