Vishay Siliconix IRFR9024TRPBF

Name: IRFR9024TRPBF
Brand: Vishay Siliconix
SKU: 2478302-IRFR9024TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR9024TRPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2478302-IRFR9024TRPBF

Description:: MOSFET P-CH 60V 8.8A DPAK

ECAD Model:

Datasheet:: IRFR9024TRPBF

Specifications

Vishay Siliconix IRFR9024TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9024TRPBF.

Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta 42W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
280mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
570pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8.8A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRFR9024TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 570pF @ 25V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFR9024TRPBF Features
a 60V drain to source voltage (Vdss)

IRFR9024TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9024TRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFR9024TRPBF More Descriptions

Trans MOSFET P-CH 60V 8.8A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 60V 8.8A DPAK
Single P-Channel 60 V 0.28 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRFR9024TRPBF.

Product Comparison

The three parts on the right have similar specifications to IRFR9024TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRFR9024TRPBF

Vishay Siliconix

8 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Tape & Reel (TR)

2015

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Ta 42W Tc

P-Channel

280mOhm @ 5.3A, 10V

4V @ 250μA

570pF @ 25V

8.8A Tc

19nC @ 10V

60V

10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFR120NTRRPBF

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

Tape & Reel (TR)

2004

Discontinued

1 (Unlimited)

MOSFET (Metal Oxide)

48W Tc

N-Channel

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Tc

25nC @ 10V

100V

10V

±20V

ROHS3 Compliant

YES

SILICON

HEXFET®

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

FET General Purpose Power

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

9.4A

0.21Ohm

38A

100V

91 mJ

IRFR9024TRPBF vs IRFR120NTRRPBF
IRFR024NTRRPBF

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

Tape & Reel (TR)

2004

Discontinued

1 (Unlimited)

MOSFET (Metal Oxide)

45W Tc

N-Channel

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

55V

10V

±20V

ROHS3 Compliant

YES

SILICON

HEXFET®

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

17A

0.075Ohm

68A

55V

71 mJ

IRFR9024TRPBF vs IRFR024NTRRPBF
IRFR12N25DTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

144W Tc

N-Channel

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR9024TRPBF vs IRFR12N25DTRRP