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IRFR9024NTRPBF

Infineon Technologies IRFR9024NTRPBF

Part Number:
IRFR9024NTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3586031-IRFR9024NTRPBF
Description:
MOSFET P-CH 55V 11A DPAK
ECAD Model:
Datasheet:
IRFR9024NTRPBF

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Specifications
Infineon Technologies IRFR9024NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR9024NTRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    175mOhm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -55V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -11A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    38W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    38W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    175m Ω @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    55ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    37 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    -11A
  • Threshold Voltage
    -4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -55V
  • Pulsed Drain Current-Max (IDM)
    44A
  • Dual Supply Voltage
    55V
  • Avalanche Energy Rating (Eas)
    62 mJ
  • Recovery Time
    71 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -4 V
  • Height
    2.52mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRFR9024NTRPBF Description
Fifth-generation HEXFETs from lntemational Rectifier use advanced processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when combined with the HEXFET Power MOSFETs' high switching speed and ruggedized device design, is unrivaled. supplies the designer with a highly efficient and dependable tool that may be used in a range of situations. Surface mounting with vapor phase, infrared, or wave soldering processes is possible with the D-Pak. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFR9024NTRPBF Features
?Ultra LowOnResista nee nee nee nee nee nee ne
?P-Channel
?Surface Installation (IRFR9024N)
?Standard Lead (IRFU9024N)
?Adva need a Process Tech with no logical background.
?Quick Switching
?Avalanche-Resistant
?Lead-Free

IRFR9024NTRPBF Applications
Switching applications
IRFR9024NTRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W
Single P-Channel 55V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P Channel Mosfet, -55V, 11A, D-Pak, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR9024NTRPBF.
Product Comparison
The three parts on the right have similar specifications to IRFR9024NTRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Supplier Device Package
    View Compare
  • IRFR9024NTRPBF
    IRFR9024NTRPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    175mOhm
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    -55V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -11A
    30
    R-PSSO-G2
    1
    1
    38W Tc
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    13 ns
    P-Channel
    SWITCHING
    175m Ω @ 6.6A, 10V
    4V @ 250μA
    350pF @ 25V
    11A Tc
    19nC @ 10V
    55ns
    10V
    ±20V
    37 ns
    23 ns
    -11A
    -4V
    TO-252AA
    20V
    -55V
    44A
    55V
    62 mJ
    71 ns
    150°C
    -4 V
    2.52mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
  • IRFR12N25DTRRP
    IRFR12N25DTRRP
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    IRFR9024NTRPBF vs IRFR12N25DTRRP
  • IRFR12N25DCTRRP
    IRFR12N25DCTRRP
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    D-Pak
    IRFR9024NTRPBF vs IRFR12N25DCTRRP
  • IRFR010TRR
    IRFR010TRR
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    25W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    50V
    -
    IRFR9024NTRPBF vs IRFR010TRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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