IRFR9024NTRL

Infineon Technologies IRFR9024NTRL

Part Number:
IRFR9024NTRL
Manufacturer:
Infineon Technologies
Ventron No:
2853518-IRFR9024NTRL
Description:
MOSFET P-CH 55V 11A DPAK
ECAD Model:
Datasheet:
IRFR/U9024N

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Specifications
Infineon Technologies IRFR9024NTRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR9024NTRL.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    38W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    175m Ω @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    11A
  • Drain-source On Resistance-Max
    0.175Ohm
  • Pulsed Drain Current-Max (IDM)
    44A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    62 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRFR9024NTRL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 62 mJ.A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 11A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFR9024NTRL Features
the avalanche energy rating (Eas) is 62 mJ
based on its rated peak drain current 44A.
a 55V drain to source voltage (Vdss)


IRFR9024NTRL Applications
There are a lot of Infineon Technologies
IRFR9024NTRL applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR9024NTRL More Descriptions
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET P-CH 55V 11A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 11A I(D), 55V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to IRFR9024NTRL.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Supplier Device Package
    Mount
    Voltage - Rated DC
    Current Rating
    Rise Time
    Continuous Drain Current (ID)
    Lead Free
    View Compare
  • IRFR9024NTRL
    IRFR9024NTRL
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    38W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    175m Ω @ 6.6A, 10V
    4V @ 250μA
    350pF @ 25V
    11A Tc
    19nC @ 10V
    55V
    10V
    ±20V
    TO-252AA
    11A
    0.175Ohm
    44A
    55V
    62 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DCTRLP
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRRP
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    86W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    -
    10V
    ±30V
    TO-252AA
    -
    0.18Ohm
    56A
    -
    130 mJ
    Non-RoHS Compliant
    -
    Surface Mount
    150V
    14A
    26ns
    14A
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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