Infineon Technologies IRFR9024NTRL
- Part Number:
- IRFR9024NTRL
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853518-IRFR9024NTRL
- Description:
- MOSFET P-CH 55V 11A DPAK
- Datasheet:
- IRFR/U9024N
Infineon Technologies IRFR9024NTRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR9024NTRL.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max38W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs175m Ω @ 6.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)11A
- Drain-source On Resistance-Max0.175Ohm
- Pulsed Drain Current-Max (IDM)44A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)62 mJ
- RoHS StatusNon-RoHS Compliant
IRFR9024NTRL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 62 mJ.A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 11A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR9024NTRL Features
the avalanche energy rating (Eas) is 62 mJ
based on its rated peak drain current 44A.
a 55V drain to source voltage (Vdss)
IRFR9024NTRL Applications
There are a lot of Infineon Technologies
IRFR9024NTRL applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 62 mJ.A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 11A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR9024NTRL Features
the avalanche energy rating (Eas) is 62 mJ
based on its rated peak drain current 44A.
a 55V drain to source voltage (Vdss)
IRFR9024NTRL Applications
There are a lot of Infineon Technologies
IRFR9024NTRL applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR9024NTRL More Descriptions
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET P-CH 55V 11A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 11A I(D), 55V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Trans MOSFET P-CH 55V 11A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 11A I(D), 55V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The three parts on the right have similar specifications to IRFR9024NTRL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageMountVoltage - Rated DCCurrent RatingRise TimeContinuous Drain Current (ID)Lead FreeView Compare
-
IRFR9024NTRLSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)SINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE38W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING175m Ω @ 6.6A, 10V4V @ 250μA350pF @ 25V11A Tc19nC @ 10V55V10V±20VTO-252AA11A0.175Ohm44A55V62 mJNon-RoHS Compliant--------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------144W Tc--N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-------D-Pak------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------144W Tc--N-Channel-260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V--------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrier-FET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE86W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V-10V±30VTO-252AA-0.18Ohm56A-130 mJNon-RoHS Compliant-Surface Mount150V14A26ns14AContains Lead
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 October 2023
A Complete Guide to The BC639 BJT Transistor
Ⅰ. Overview of BC639 transistorⅡ. BC639 transistor symbol, footprint and pin configurationⅢ. Technical parameters of BC639 transistorⅣ. Characteristics of BC639 transistorⅤ. Working principle of BC639 transistorⅥ. Maximum ratings... -
30 October 2023
Car Audio Power Amplifier TDA7388: Equivalents, Features, TPA3116D2 vs TDA7388
Ⅰ. Overview of TDA7388 amplifierⅡ. TDA7388 symbol, footprint and pin configurationⅢ. Technical parameters of TDA7388 amplifierⅣ. What are the features of TDA7388 amplifier?Ⅴ. Differences between TPA3116D2 and TDA7388Ⅵ.... -
30 October 2023
TDA2822 Dual Power Amplifier: Pin Configuration, Applications and Additional Information
Ⅰ. Overview of TDA2822 amplifierⅡ. TDA2822 symbol, footprint and pin configurationⅢ. Technical parameters of TDA2822 amplifierⅣ. Features of TDA2822 amplifierⅤ. How does the TDA2822 amplifier work?Ⅵ. What are... -
31 October 2023
ESP32 vs RP2040 vs STM32: Which is Best for Your Project?
Ⅰ. What is a microcontroller?Ⅱ. ESP32 vs RP2040 vs STM32: OverviewⅢ. ESP32 vs RP2040 vs STM32: ManufacturersⅣ. ESP32 vs RP2040 vs STM32: Pin configurationⅤ. ESP32 vs RP2040 vs...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.