Vishay Siliconix IRFR9014TRR
- Part Number:
- IRFR9014TRR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586833-IRFR9014TRR
- Description:
- MOSFET P-CH 60V 5.1A DPAK
- Datasheet:
- IRFR9014TRR
Vishay Siliconix IRFR9014TRR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9014TRR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta 25W Tc
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.1A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)5.1A
- Input Capacitance270pF
- Rds On Max500 mΩ
- RoHS StatusNon-RoHS Compliant
IRFR9014TRR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.1A continuous drain current (ID).For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR9014TRR Features
a continuous drain current (ID) of 5.1A
a 60V drain to source voltage (Vdss)
IRFR9014TRR Applications
There are a lot of Vishay Siliconix
IRFR9014TRR applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.1A continuous drain current (ID).For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR9014TRR Features
a continuous drain current (ID) of 5.1A
a 60V drain to source voltage (Vdss)
IRFR9014TRR Applications
There are a lot of Vishay Siliconix
IRFR9014TRR applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFR9014TRR More Descriptions
Tape & Reel (TR) Surface Mount P-Channel MOSFET (Metal Oxide) Mosfet Transistor 5.1A Tc 5.1A 2.5W Ta 25W Tc 60V
MOSFET P-CH 60V 5.1A DPAK
MOSFET P-CH 60V 5.1A DPAK
The three parts on the right have similar specifications to IRFR9014TRR.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRoHS StatusSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR9014TRRSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 25W TcP-Channel500mOhm @ 3.1A, 10V4V @ 250μA270pF @ 25V5.1A Tc12nC @ 10V60V10V±20V5.1A270pF500 mΩNon-RoHS Compliant-----------------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--Tape & Reel (TR)2004Discontinued1 (Unlimited)MOSFET (Metal Oxide)45W TcN-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V55V10V±20V---ROHS3 CompliantYESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V100V10V±20V------HEXFET®-------------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)MOSFET (Metal Oxide)25W TcN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V50V10V±20V8.2A--Non-RoHS Compliant----------------------------
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