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IRFR7540TRPBF

Infineon Technologies IRFR7540TRPBF

Part Number:
IRFR7540TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2484460-IRFR7540TRPBF
Description:
MOSFET N-CH 60V 90A DPAK
ECAD Model:
Datasheet:
IRFR7540TRPBF

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Specifications
Infineon Technologies IRFR7540TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR7540TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    3.949996g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    StrongIRFET™
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    140W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.8m Ω @ 66A, 10V
  • Vgs(th) (Max) @ Id
    3.7V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    90A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Rise Time
    38ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    59 ns
  • Continuous Drain Current (ID)
    90A
  • Threshold Voltage
    3.7V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0048Ohm
  • Pulsed Drain Current-Max (IDM)
    440A
  • DS Breakdown Voltage-Min
    60V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFR7540TRPBF Description
IRFR7540TRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 60V. The operating temperature of the IRFR7540TRPBF is -55°C~175°C TJ and its maximum power dissipation is 140W Tc. IRFR7540TRPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.

IRFR7540TRPBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant 

IRFR7540TRPBF Applications
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters 
IRFR7540TRPBF More Descriptions
Trans MOSFET N-CH Si 60V 110A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 60V 90A DPAK
Single N-Channel 60V 4.8 mOhm 86 nC HEXFET® Power Mosfet - TO-252-3
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 60V, 90A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N-CH, 60V, 90A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 140W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to IRFR7540TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    View Compare
  • IRFR7540TRPBF
    IRFR7540TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    3.949996g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    StrongIRFET™
    2004
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    1
    140W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    8.7 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 66A, 10V
    3.7V @ 100μA
    4360pF @ 25V
    90A Tc
    130nC @ 10V
    38ns
    60V
    6V 10V
    ±20V
    32 ns
    59 ns
    90A
    3.7V
    TO-252AA
    20V
    0.0048Ohm
    440A
    60V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
  • IRFR120NCTRLPBF
    IRFR120NCTRLPBF
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    48W Tc
    -
    -
    -
    -
    N-Channel
    -
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Ta
    25nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFR7540TRPBF vs IRFR120NCTRLPBF
  • IRFR12N25DTRPBF
    IRFR12N25DTRPBF
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFR7540TRPBF vs IRFR12N25DTRPBF
  • IRFR12N25DTRRP
    IRFR12N25DTRRP
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFR7540TRPBF vs IRFR12N25DTRRP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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