IRFR6215TRLPBF

Infineon Technologies IRFR6215TRLPBF

Part Number:
IRFR6215TRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478854-IRFR6215TRLPBF
Description:
MOSFET P-CH 150V 13A DPAK
ECAD Model:
Datasheet:
IRFR6215TRLPBF

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Specifications
Infineon Technologies IRFR6215TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR6215TRLPBF.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    110W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    295m Ω @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    860pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 10V
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain-source On Resistance-Max
    0.295Ohm
  • Pulsed Drain Current-Max (IDM)
    44A
  • DS Breakdown Voltage-Min
    150V
  • Avalanche Energy Rating (Eas)
    310 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRFR6215TRLPBF Description

IRFR6215TRLPBF is a power MOSFET. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.?
IRFR6215TRLPBF Features

Single -150V P-channel HEXFET? power MOSFET
Advanced process technology
Fast switching
Fully avalanche rated
Low RDS(on)
Industry-leading quality
Dynamic dv/dt rating
175°C operating temperature
IRFR6215TRLPBF Applications

New energy vehicles
photovoltaic & wind power generation
smart grid
Body electronics & lighting
Hybrid, electric & powertrain systems
IRFR6215TRLPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - DPAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D-PAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.295ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to IRFR6215TRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Supplier Device Package
    View Compare
  • IRFR6215TRLPBF
    IRFR6215TRLPBF
    12 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    110W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    295m Ω @ 6.6A, 10V
    4V @ 250μA
    860pF @ 25V
    13A Tc
    66nC @ 10V
    150V
    10V
    ±20V
    TO-252AA
    13A
    0.295Ohm
    44A
    150V
    310 mJ
    ROHS3 Compliant
    -
    -
  • IRFR12N25DCTRLP
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    D-Pak
  • IRFR12N25DTRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRRP
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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