Infineon Technologies IRFR6215PBF

Name: IRFR6215PBF
Brand: Infineon Technologies
SKU: 2479680-IRFR6215PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR6215PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479680-IRFR6215PBF

Description:: MOSFET P-CH 150V 13A DPAK

ECAD Model:

Datasheet:: IRFR6215PBF

Specifications

Infineon Technologies IRFR6215PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR6215PBF.

Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
66nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
13A
Drain-source On Resistance-Max
0.295Ohm
Pulsed Drain Current-Max (IDM)
44A
DS Breakdown Voltage-Min
150V
Avalanche Energy Rating (Eas)
310 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR6215PBF Description
The IRFR6215PBF is a -150V single P-channel HEXFET? Power MOSFET utilizing advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

IRFR6215PBF Features
Advanced process technology
Fully avalanche rated
175°C Operating temperature
P-Channel
Surface Mount
Fast Switching
Lead-Free

IRFR6215PBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives

IRFR6215PBF More Descriptions

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
Single P-Channel 150 V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -150V, 13A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):295mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-13A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:44A; SMD Marking:IRFR6215; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:-150V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

Product Comparison

The three parts on the right have similar specifications to IRFR6215PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Mount

Continuous Drain Current (ID)

Voltage - Rated DC

Current Rating

Rise Time

Lead Free

View Compare
IRFR6215PBF

Infineon Technologies

20 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

110W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

295m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

150V

10V

±20V

TO-252AA

13A

0.295Ohm

44A

150V

310 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-
IRFR12N25DCTRLP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

D-Pak

-

-

-

-

-

-

IRFR6215PBF vs IRFR12N25DCTRLP
IRFR010TRR

Vishay Siliconix

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

Surface Mount

8.2A

-

-

-

-

IRFR6215PBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-

Surface Mount

14A

150V

14A

26ns

Contains Lead

IRFR6215PBF vs IRFR13N15DTR

Certification

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IRFR6215PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR6215PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 150V 13A 3-Pin(2 Tab) DPAK T/	669	1 $0.9905 10 $0.8843 100 $0.7255 500 $0.6589 1000 $0.5197 3000 $0.4738 9000 $0.4264
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET P-CH 150V 13A DPAK RoHS: Compliant	4927	1 $1.69 10 $1.498 100 $1.2 500 $0.94764 1000 $0.76409
IRFR6215PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 150V 13A 3-Pin(2 Tab) DPAK T/	669	16 $0.8843 100 $0.7255 500 $0.6589
IRFR6215PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH -150V, -13A, 295mOHM, 3-Pin(2 Ta RoHS: Compliant	34225	1 $2.2199 10 $2.2139 25 $0.8739 50 $0.8719 100 $0.6409 500 $0.5889 1000 $0.5879
IRFR6215PBF-BL DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) DPAK - Rai RoHS: Compliant	27416
IRFR6215PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH -150V, -13A, 295mOHM, 3-Pin(2 Ta RoHS: Compliant	0	3000 $0.48852 6000 $0.46844 9000 $0.46211 15000 $0.44411 30000 $0.43842 75000 $0.42746 150000 $0.41703
IRFR6215PBF-BL DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) DPAK (Alt: RoHS: Compliant	0
IRFR6215PBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS , ROHS COMPLIANT: YES	0
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -150V, RDS(ON) 0.295 RoHS: Compliant	0	1 $1.126 10 $0.994 100 $0.866 500 $0.751 1000 $0.662
IRFR6215PBF DISTI #	International Rectifier	RoHS: Not Compliant	2200	1 $0.72 25 $0.67 100 $0.65 500 $0.62 1000 $0.59
IRFR6215PBF DISTI #	Infineon Technologies AG	Single P-Channel 150 V 0.295 Ohm 66 nC HEXFET Powe RoHS: Compliant	2899	25 $0.54 100 $0.5 250 $0.475 500 $0.46 1000 $0.425
IRFR6215TRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -150V 13A 580mOhm 44nC RoHS: Compliant	3586	1 $1.25 10 $1.07 100 $0.818 500 $0.723 1000 $0.57 3000 $0.506 9000 $0.487
IRFR6215TRPBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC RoHS: Compliant	808	1 $1.25 10 $1.07 100 $0.818 500 $0.723 1000 $0.57 2000 $0.506
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC RoHS: Compliant	5041	1 $1.31 10 $1.12 100 $0.858 500 $0.759 1000 $0.599 3000 $0.531 9000 $0.511
IRFR6215PBF DISTI #	International Rectifier		71
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 150V 13A DPAK, TU	944	25 $0.71 100 $0.54 250 $0.52 500 $0.48
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 150V 13A DPAK, EA	169	1 $2 25 $0.71 100 $0.54 250 $0.52 500 $0.48
IRFR6215TRPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	2650	50 $0.4685 100 $0.4085 500 $0.3785 3000 $0.3645
IRFR6215PBF DISTI #	International Rectifier	RoHS: Compliant	68
IRFR6215PBF DISTI #	Infineon Technologies AG	P-CH 150V 13A 580mOhm DPAK RoHS: Compliant	3300	75 $0.5606 225 $0.5286 450 $0.4966 975 $0.4485 2100 $0.4325
IRFR6215PBF DISTI #	Infineon Technologies AG	RoHS: Compliant	1951	225 $1.08 1951 $0.9818
IRFR6215PBF DISTI #	International Rectifier	INSTOCK	5025
IRFR6215PBF DISTI #	International Rectifier	INSTOCK	1998
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET, P, -150V, 13A, D-PAK RoHS: Compliant	3729	1 $2.07 10 $1.78 100 $1.36 500 $1.2 1000 $0.949 3000 $0.84 9000 $0.809
IRFR6215PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 150V 13A 3-Pin(2 Tab) DPAK T/ RoHS: Compliant	28	10 $0.403
IRFR6215PBF DISTI #	Infineon Technologies AG	MOSFET, P, -150V, 13A, D-PAK RoHS: Compliant	3729	5 $0.469 25 $0.355 100 $0.292 250 $0.291 500 $0.29

IRFR621~~(13)~~
IRFR62~~(13)~~
IRFR6~~(13)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR6215PBF

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