Infineon Technologies IRFR5410TRPBF

Name: IRFR5410TRPBF
Brand: Infineon Technologies
SKU: 2848660-IRFR5410TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR5410TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848660-IRFR5410TRPBF

Description:: MOSFET P-CH 100V 13A DPAK

ECAD Model:

Datasheet:: IRFR5410TRPBF

Specifications

Infineon Technologies IRFR5410TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR5410TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1999
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
205mOhm
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-13A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
66W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
66W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
205m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Rise Time
58ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
-13A
Threshold Voltage
-4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-100V
Pulsed Drain Current-Max (IDM)
52A
Dual Supply Voltage
-100V
Recovery Time
190 ns
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-4 V
Height
2.52mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFR5410TRPBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to deliver incredibly low on-resista nee per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The D-Pak is made to be surface mounted using wave soldering, vapor phase, or infrared technologies. For through-hole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFR5410TRPBF Features
?Extremely Low On-Resistant
?P-ChannelX
Mount Surface (IRFR5410)
Direct Lead (IRFU5410)
Process technology, advanced
? Quick Switching
?Fully Rated for Avalanches
?Lead-Free

IRFR5410TRPBF Applications
Switching applications

IRFR5410TRPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
Trans MOSFET P-CH Si 100V 13A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 100V 13A DPAK
Single P-Channel 100 V 0.205 Ohm 58nC HEXFET® Power Mosfet - TO-252AA
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:66W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR5410TRPBF.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 205 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 66

Product Comparison

The three parts on the right have similar specifications to IRFR5410TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Reach Compliance Code

Qualification Status

Operating Temperature (Max)

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRFR5410TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1999

e3

Active

1 (Unlimited)

2

EAR99

205mOhm

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Other Transistors

-100V

MOSFET (Metal Oxide)

GULL WING

260

-13A

30

R-PSSO-G2

1

1

66W Tc

Single

ENHANCEMENT MODE

66W

DRAIN

15 ns

P-Channel

SWITCHING

205m Ω @ 7.8A, 10V

4V @ 250μA

760pF @ 25V

13A Tc

58nC @ 10V

58ns

100V

10V

±20V

46 ns

45 ns

-13A

-4V

TO-252AA

20V

-100V

52A

-100V

190 ns

150°C

-4 V

2.52mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
IRFR120NTRRPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

R-PSSO-G2

1

-

48W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Tc

25nC @ 10V

-

100V

10V

±20V

-

-

-

-

TO-252AA

-

-

38A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

not_compliant

Not Qualified

175°C

SINGLE WITH BUILT-IN DIODE

9.4A

0.21Ohm

100V

91 mJ

IRFR5410TRPBF vs IRFR120NTRRPBF
IRFR120NCTRLPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

48W Tc

-

-

-

-

-

N-Channel

-

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Ta

25nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR5410TRPBF vs IRFR120NCTRLPBF
IRFR13N15DTR

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

-

-

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

260

14A

30

R-PSSO-G2

1

-

86W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

26ns

-

10V

±30V

-

-

14A

-

TO-252AA

-

-

56A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

not_compliant

Not Qualified

-

SINGLE WITH BUILT-IN DIODE

-

0.18Ohm

-

130 mJ

IRFR5410TRPBF vs IRFR13N15DTR

Certification

Related parts for IRFR5410TRPBF

IRFR014TRLPBF

Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK
IRFR120NTRRPBF

Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK
IRFR024NTRRPBF

Infineon Technologies

MOSFET N-CH 55V 17A DPAK
IRFR12N25DCTRLP

Infineon Technologies

MOSFET N-CH 250V 14A DPAK
IRFR120NCTRLPBF

Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK
IRFR12N25DTRPBF

Infineon Technologies

MOSFET N-CH 250V 14A DPAK
IRFR12N25DTRRP

Infineon Technologies

MOSFET N-CH 250V 14A DPAK
IRFR12N25DCTRRP

Infineon Technologies

MOSFET N-CH 250V 14A DPAK
IRFR010TRR

Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK
IRFR13N15DTR

Infineon Technologies

MOSFET N-CH 150V 14A DPAK

Popular Search Part Number Related Keywords Search Tags

IRFR5410TRPBF Price
IRFR5410TRPBF Picture
IRFR5410TRPBF Buy
IRFR5410TRPBF Distributor
IRFR5410TRPBF Image
IRFR5410TRPBF Inquiry
IRFR5410TRPBF Manufacturer
IRFR5410TRPBF Part
IRFR5410TRPBF Description
IRFR5410TRPBF Technical Data
IRFR5410TRPBF Stock
IRFR5410TRPBF Wholesales
IRFR5410TRPBF PDF
IRFR5410TRPBF Inventory
IRFR5410TRPBF Supplier
IRFR5410TRPBF Datasheet
IRFR5410TRPBF Rfq
IRFR5410TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	190	23 $1.0022 50 $0.9919 100 $0.8084
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 13A DPAK RoHS: Compliant	13269	1 $1.71 10 $1.525 100 $1.2222 500 $0.9659 1000 $0.7795
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 13A DPAK RoHS: Compliant	13269	1 $1.71 10 $1.525 100 $1.2222 500 $0.9659 1000 $0.7795
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 13A DPAK RoHS: Compliant	10000	2000 $0.71155
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	190	5 $0.942 10 $0.764 50 $0.514 100 $0.448
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	305	1 $1.0542
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	0	2000 $0.4739 4000 $0.4559 8000 $0.4399 12000 $0.4249 20000 $0.4179
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0	2000 $0.5329 4000 $0.5319 8000 $0.5299 12000 $0.5289 20000 $0.5279
IRFR5410TRPBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -100V, 13A, D-PAK, Transistor P	447	1 $1.45 10 $1.25 25 $1.16 50 $1.07 100 $0.973 250 $0.92 500 $0.832 1000 $0.699
IRFR5410TRPBF. DISTI #	Infineon Technologies AG	Transistor Polarity:P Channel, Continuous Drain C	0
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.205 RoHS: Compliant	0	2000 $1.15
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC RoHS: Compliant	16536	1 $1.35 10 $1.16 100 $0.885 500 $0.782 1000 $0.617
IRFR5410TRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -100V 13A 205mOhm 38.7nC RoHS: Compliant	68	1 $1.35 10 $1.16 100 $0.885 500 $0.782 1000 $0.617 3000 $0.548
IRFR5410PBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC RoHS: Compliant	2451	1 $1.14 10 $0.966 100 $0.742 500 $0.656 1000 $0.518 3000 $0.459
IRFR5410TRPBF DISTI #	International Rectifier	13A, 100V, 0.205OHM, P-CHANNEL, SI, POWER, MOSFET,	9	1 $0.96 6 $0.72
IRFR5410TRPBF DISTI #	International Rectifier	13A, 100V, 0.205OHM, P-CHANNEL, SI, POWER, MOSFET,	234	1 $2.5 41 $1.25 161 $1
IRFR5410TRPBF DISTI #	Infineon Technologies AG	HEXFET P-CH MOSFET 13A 100V DPAK, RL	1940	100 $0.427 500 $0.378 1000 $0.299 2000 $0.264
IRFR5410TRPBF DISTI #	International Rectifier		3598
IRFR5410TRPBF DISTI #	Infineon Technologies AG	Transistor: P-MOSFET, unipolar, -100V, -13A, 6	4000	2000 $0.3336
IRFR5410TRPBF DISTI #	Infineon Technologies AG	P-Ch 100V 13A 66W 0,205R TO252AA RoHS: Compliant	200	50 $0.3855 100 $0.3455 500 $0.3255 3000 $0.3135
IRFR5410TRPBF DISTI #	International Rectifier	INSTOCK	639
IRFR5410TRPBF DISTI #	Infineon Technologies AG	INSTOCK	1528
IRFR5410TRPBF DISTI #		INSTOCK	11
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET, P CH, -100V, -13A, TO-252AA-3 RoHS: Compliant	2128	1 $2.14 10 $1.84 100 $1.4 500 $1.24 1000 $0.977 2000 $0.977
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET, P CH, -100V, -13A, TO-252AA-3 RoHS: Compliant	0	1 $2.14 10 $1.84 100 $1.4 500 $1.24 1000 $0.977 2000 $0.977
IRFR5410TRPBF DISTI #	Infineon Technologies AG	MOSFET, P CH, -100V, -13A, TO-252AA-3 RoHS: Compliant	2273	5 $0.568 25 $0.502 100 $0.436 250 $0.411 500 $0.386
IRFR5410TRPBF DISTI #	Infineon Technologies AG	-100V,205m,-13A,P-Channel Power MOSFET	1600	1 $0.76 100 $0.64 500 $0.56 1000 $0.55
IRFR5410TRPBF DISTI #	INFINEON/IR	D-PAK (TO-252) RoHS: Compliant	2000	2000 $0.4

IRFR541~~(9)~~
IRFR54~~(16)~~
IRFR5~~(40)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR5410TRPBF

Quick Request Quote

ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More

An Overview of 74HC373 Octal Transparent D Type Latch

OP07 Operational Amplifier Features, Pin Configuration and Application Scenarios

AT89C52 Microcontroller Equivalents, Functions, Structure and Applications