Infineon Technologies IRFR5305PBF

Name: IRFR5305PBF
Brand: Infineon Technologies
SKU: 2478746-IRFR5305PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR5305PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2478746-IRFR5305PBF

Description:: MOSFET P-CH 55V 31A DPAK

ECAD Model:

Datasheet:: IRFR5305PBF

Specifications

Infineon Technologies IRFR5305PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR5305PBF.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2000
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
31A
Drain-source On Resistance-Max
0.065Ohm
Pulsed Drain Current-Max (IDM)
110A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
280 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR5305PBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to provide exceptionally low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device design that HEXFET? Power MOSFETs are renowned for. The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For through-hole mounting uses, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFR5305PBF Features
Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free

IRFR5305PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRFR5305PBF More Descriptions

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
Single P-Channel 55 V 0.065 Ohm 42 nC HEXFET® Power Mosfet - TO-252AA
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -55V, -28A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:110A; SMD Marking:IRFR5305; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

Product Comparison

The three parts on the right have similar specifications to IRFR5305PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Operating Temperature (Max)

Supplier Device Package

Mount

Voltage - Rated DC

Current Rating

Rise Time

Continuous Drain Current (ID)

Lead Free

View Compare
IRFR5305PBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2000

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

8541.29.00.95

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

110W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

65m Ω @ 16A, 10V

4V @ 250μA

1200pF @ 25V

31A Tc

63nC @ 10V

55V

10V

±20V

TO-252AA

31A

0.065Ohm

110A

55V

280 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IRFR024NTRRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

45W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

55V

10V

±20V

TO-252AA

17A

0.075Ohm

68A

55V

71 mJ

ROHS3 Compliant

175°C

-

-

-

-

-

-

-

IRFR5305PBF vs IRFR024NTRRPBF
IRFR12N25DCTRRP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

D-Pak

-

-

-

-

-

-

IRFR5305PBF vs IRFR12N25DCTRRP
IRFR13N15DTR

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-

-

Surface Mount

150V

14A

26ns

14A

Contains Lead

IRFR5305PBF vs IRFR13N15DTR

Certification

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IRFR5305PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR5305PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 55V 31A 3-Pin(2 Tab) DPAK Tub RoHS: Compliant	109	10 $0.942 50 $0.628 100 $0.513
IRFR5305TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 55V 31A DPAK RoHS: Compliant	23652	1 $1.04 10 $0.927 100 $0.7429 500 $0.5871 1000 $0.47381
IRFR5305TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 55V 31A DPAK RoHS: Compliant	23652	1 $1.04 10 $0.927 100 $0.7429 500 $0.5871 1000 $0.47381
IRFR5305TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 55V 31A DPAK RoHS: Compliant	22000	2000 $0.4325
IRFR5305PBF DISTI #	Infineon Technologies AG	MOSFET P-CH 55V 31A DPAK RoHS: Compliant	142	1 $1.3 10 $1.159 100 $0.9278 500 $0.7327 1000 $0.59078
IRFR5305PBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2 Tab) DPAK (Alt: RoHS: Compliant	0	1 $0.8729 10 $0.7069 25 $0.7049 50 $0.6459 100 $0.5679 500 $0.5019 1000 $0.3949
IRFR5305PBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 31A, D-PAK, Transistor Po	1155	1 $1.06 10 $0.909 100 $0.712 500 $0.636 1000 $0.513 2500 $0.48 10000 $0.446
IRFR5305PBF. DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 31A, D-PAK, Transistor Po	0
IRFR5305PBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.065O RoHS: Compliant	0	1125 $0.938
IRFR5305PBF DISTI #	Infineon Technologies AG	Single P-Channel 55 V 0.065 Ohm 42 nC HEXFET Power RoHS: Compliant	1088	25 $0.48 750 $0.425
IRFR5305TRPBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC RoHS: Compliant	23782	1 $1.12 10 $0.949 100 $0.729 500 $0.644 1000 $0.509
IRFR5305TRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -55V -28A 65mOhm 42nC RoHS: Compliant	296	1 $1.12 10 $0.949 100 $0.729 500 $0.644 1000 $0.509 3000 $0.451
IRFR5305PBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC RoHS: Compliant	8095	1 $1.02 10 $0.864 100 $0.664 500 $0.587 1000 $0.463 3000 $0.411
IRFR5305PBF DISTI #	International Rectifier	RoHS: Not Compliant	19049	1 $0.5 25 $0.47 100 $0.45 500 $0.43 1000 $0.41
IRFR5305PBF DISTI #	International Rectifier		34
IRFR5305PBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 55V 31A DPAK, EA	4215	1 $2 25 $0.47 100 $0.4 250 $0.38 500 $0.37
IRFR5305PBF DISTI #	International Rectifier	RoHS: Compliant	50
IRFR5305PBF DISTI #	Infineon Technologies AG	P-Ch 55V 31A 110W 0,065R TO252AA RoHS: Compliant	13875	75 $0.382 150 $0.322 300 $0.292 600 $0.281
IRFR5305TRPBF DISTI #	Infineon Technologies AG	P-Ch 55V 31A 110W 0,065R TO252AA RoHS: Compliant	28450	50 $0.3605 100 $0.3205 500 $0.3005 3000 $0.2895
IRFR5305PBF DISTI #	Infineon Technologies AG	P-CH 55V 28A 65mOhm DPAK RoHS: Compliant	0	75 $0.443 225 $0.4177 450 $0.3924 1050 $0.3544 2325 $0.3418
IRFR5305PBF DISTI #	International Rectifier	INSTOCK	823
IRFR5305PBF DISTI #	International Rectifier	INSTOCK	738
IRFR5305PBF DISTI #	INTL RECT	INSTOCK	1233
IRFR5305PBF DISTI #	Infineon Technologies AG	MOSFET, P, -55V, -31A, D-PAK RoHS: Compliant	7055	5 $0.555
IRFR5305PBF DISTI #	Infineon Technologies AG	MOSFET, P, -55V, -31A, D-PAK RoHS: Compliant	6635	5 $0.729 25 $0.47 100 $0.4 250 $0.38 500 $0.37

IRFR530~~(11)~~
IRFR53~~(11)~~
IRFR5~~(40)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR5305PBF

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