Infineon Technologies IRFR4105PBF

Name: IRFR4105PBF
Brand: Infineon Technologies
SKU: 2851095-IRFR4105PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR4105PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2851095-IRFR4105PBF

Description:: MOSFET N-CH 55V 27A DPAK

ECAD Model:

Datasheet:: IRFR4105PBF

Specifications

Infineon Technologies IRFR4105PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR4105PBF.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
68W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
27A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.045Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
65 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR4105PBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFR4105PBF Features
Ultra Low On-Resistance
Surface Mount (IRFR4105)
Straight Lead (IRFU4105)
Fast Switching
Fully Avalanche Rated

IRFR4105PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRFR4105PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W
Single N-Channel 55 V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 25A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:46W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:27A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:100A; SMD Marking:IRFR5104; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFR4105PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Mount

Continuous Drain Current (ID)

Voltage - Rated DC

Current Rating

Rise Time

Lead Free

View Compare
IRFR4105PBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

68W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

45m Ω @ 16A, 10V

4V @ 250μA

700pF @ 25V

27A Tc

34nC @ 10V

55V

10V

±20V

TO-252AA

20A

0.045Ohm

100A

55V

65 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-
IRFR12N25DCTRRP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

D-Pak

-

-

-

-

-

-

IRFR4105PBF vs IRFR12N25DCTRRP
IRFR010TRR

Vishay Siliconix

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

Surface Mount

8.2A

-

-

-

-

IRFR4105PBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-

Surface Mount

14A

150V

14A

26ns

Contains Lead

IRFR4105PBF vs IRFR13N15DTR

Certification

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IRFR4105PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR4105PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 27A 3-Pin(2 Tab) DPAK Tub RoHS: Compliant	5452	47 $0.295 100 $0.2846 250 $0.275 500 $0.2659 1000 $0.2575 2500 $0.2496 5000 $0.2421
IRFR4105TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 27A DPAK RoHS: Compliant	16839	1 $1.09 10 $0.966 100 $0.7634 500 $0.592 1000 $0.46736
IRFR4105TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 27A DPAK RoHS: Compliant	16839	1 $1.09 10 $0.966 100 $0.7634 500 $0.592 1000 $0.46736
IRFR4105TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 27A DPAK RoHS: Compliant	16000	2000 $0.4235
IRFR4105PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 27A DPAK RoHS: Compliant	0
IRFR4105PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 27A 3-Pin(2 Tab) DPAK Tub RoHS: Compliant	925	10 $0.348 50 $0.325
IRFR4105PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 27A 3-Pin(2 Tab) DPAK Tub RoHS: Compliant	5470	5 $1.49 25 $0.599 50 $0.544 100 $0.485 500 $0.399 1000 $0.366
IRFR4105PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 27A 3-Pin(2 Tab) DPAK (Alt: RoHS: Compliant	3465	1 $2.2199 10 $2.2139 25 $0.7069 50 $0.7049 100 $0.5589 500 $0.5299 1000 $0.5289
IRFR4105PBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS , ROHS COMPLIANT: YES	0
IRFR4105PBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.045Oh RoHS: Compliant	0	1125 $0.798
IRFR4105PBF DISTI #	Infineon Technologies AG	MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC RoHS: Compliant	1855	1 $1.05 10 $0.894 100 $0.687 500 $0.607 1000 $0.479 3000 $0.425 9000 $0.409
IRFR4105PBF DISTI #	International Rectifier	Power Field-Effect Transistor, 20A I(D), 55V, 0.04 RoHS: Compliant	904	1 $0.58 25 $0.54 100 $0.52 500 $0.5 1000 $0.47
IRFR4105PBF DISTI #	International Rectifier		96
IRFR4105PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 55V 27A DPAK, TU	702	25 $0.52 100 $0.4 250 $0.36 500 $0.35
IRFR4105PBF DISTI #	International Rectifier	20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFE	54	1 $1.616 4 $1.212 13 $0.808
IRFR4105PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 25A, 48W,	351	1 $0.6146 3 $0.459 10 $0.3741 75 $0.3104
IRFR4105PBF DISTI #	Infineon Technologies AG	N-Ch 55V 27A 68W 0,045R TO252AA RoHS: Compliant	1800	75 $0.268 150 $0.228 300 $0.208 600 $0.2
IRFR4105TRPBF DISTI #	Infineon Technologies AG	N-Ch 55V 27A 68W 0,045R TO252AA RoHS: Compliant	1400	50 $0.259 100 $0.219 500 $0.199 3000 $0.192
IRFR4105PBF DISTI #	Infineon Technologies AG	N-CH 55V 25A 45mOhm TO252 RoHS: Compliant	1050	75 $0.3569 225 $0.3365 450 $0.3161 1125 $0.2855 2700 $0.2753
IRFR4105PBF DISTI #	International Rectifier	RoHS: Compliant	66
IRFR4105PBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 25A, D-PAK RoHS: Compliant	0	5 $1.36 25 $0.936 100 $0.72 250 $0.648 500 $0.63 1000 $0.578 5000 $0.564

IRFR410~~(21)~~
IRFR41~~(21)~~
IRFR4~~(60)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR4105PBF

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