Infineon Technologies IRFR4104PBF

Name: IRFR4104PBF
Brand: Infineon Technologies
SKU: 2489027-IRFR4104PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR4104PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2489027-IRFR4104PBF

Description:: MOSFET N-CH 40V 42A DPAK

ECAD Model:

Datasheet:: IRFR4104PBF

Specifications

Infineon Technologies IRFR4104PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR4104PBF.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
140W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.5m Ω @ 42A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
89nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
42A
Drain-source On Resistance-Max
0.0055Ohm
Pulsed Drain Current-Max (IDM)
480A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
145 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR4104PBF Description Specifically designed for Automotive applications, this HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175??C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRFR4104PBF Features Advanced Process Technology Ultra Low On-Resistance 175??C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free

IRFR4104PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
Single N-Channel 40 V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:480A; SMD Marking:IRFR4104PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFR4104PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Operating Temperature (Max)

View Compare
IRFR4104PBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

140W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5.5m Ω @ 42A, 10V

4V @ 250μA

2950pF @ 25V

42A Tc

89nC @ 10V

40V

10V

±20V

TO-252AA

42A

0.0055Ohm

480A

40V

145 mJ

ROHS3 Compliant

-

-
IRFR024NTRRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

45W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

55V

10V

±20V

TO-252AA

17A

0.075Ohm

68A

55V

71 mJ

ROHS3 Compliant

175°C

IRFR4104PBF vs IRFR024NTRRPBF
IRFR12N25DTRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

IRFR4104PBF vs IRFR12N25DTRPBF
IRFR12N25DTRRP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

IRFR4104PBF vs IRFR12N25DTRRP

Certification

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Part Number	Manufacturers	Description	Stock	Price
IRFR4104TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 42A DPAK RoHS: Compliant	3351	1 $1.94 10 $1.769 100 $1.4411 500 $1.14368 1000 $0.96524
IRFR4104TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 42A DPAK RoHS: Compliant	3351	1 $1.94 10 $1.769 100 $1.4411 500 $1.14368 1000 $0.96524
IRFR4104TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 42A DPAK RoHS: Compliant	2000	2000 $0.87938
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 42A DPAK RoHS: Compliant	0
IRFR4104PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 119A 3-Pin(2 Tab) DPAK (Alt: RoHS: Compliant	0	1 $1.5379 10 $1.3189 25 $1.3159 50 $1.3129 100 $1.0479 500 $0.9149 1000 $0.7579
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 4.3 Mil RoHS: Compliant	0	675 $2.23
IRFR4104PBF DISTI #	International Rectifier	Power Field-Effect Transistor, 42A I(D), 40V, 0.00 RoHS: Compliant	243	1 $0.99 25 $0.92 100 $0.88 500 $0.85 1000 $0.8
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC RoHS: Compliant	3357	1 $1.8 10 $1.53 100 $1.23 500 $1.07 1000 $0.886 3000 $0.825 6000 $0.794 9000 $0.763
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 40V 119A DPAK, TU	395	25 $1.048 50 $1.008 250 $0.966 500 $0.926
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 40V 119A DPAK, PK	65	5 $1.092 25 $1.048 50 $1.008 250 $0.966 500 $0.926
IRFR4104PBF DISTI #	International Rectifier	RoHS: Compliant	1384
IRFR4104PBF DISTI #	Infineon Technologies AG	N-Ch 40V 42A 140W 0,0055R TO252AA RoHS: Compliant	875	75 $0.655 150 $0.555 300 $0.505 600 $0.486
IRFR4104TRPBF DISTI #	Infineon Technologies AG	N-Ch 40V 42A 140W 0,0055R TO252AA RoHS: Compliant	1900	50 $0.609 100 $0.549 500 $0.519 3000 $0.4995
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET, N, D-PAK RoHS: Compliant	32	1 $1.1
IRFR4104PBF DISTI #	INFINEON/IR	D-PAK (TO-252) RoHS: Compliant	918	1275 $0.5714
IRFR4104PBF DISTI #	Infineon Technologies AG	MOSFET, N, D-PAK RoHS: Compliant	0	5 $0.62 25 $0.565 100 $0.455 250 $0.425

Infineon Technologies IRFR4104PBF

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