Infineon Technologies IRFR3910CPBF
- Part Number:
- IRFR3910CPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493103-IRFR3910CPBF
- Description:
- MOSFET N-CH 100V 16A DPAK
- Datasheet:
- IRFR3910CPBF
Infineon Technologies IRFR3910CPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR3910CPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max79W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs115m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
IRFR3910CPBF Overview
A device's maximum input capacitance is 640pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR3910CPBF Features
a 100V drain to source voltage (Vdss)
IRFR3910CPBF Applications
There are a lot of Infineon Technologies
IRFR3910CPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 640pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR3910CPBF Features
a 100V drain to source voltage (Vdss)
IRFR3910CPBF Applications
There are a lot of Infineon Technologies
IRFR3910CPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR3910CPBF More Descriptions
MOSFET N-CH 100V 16A DPAK
The three parts on the right have similar specifications to IRFR3910CPBF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountContinuous Drain Current (ID)View Compare
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IRFR3910CPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTubeHEXFET®2005Obsolete1 (Unlimited)MOSFET (Metal Oxide)79W TcN-Channel115m Ω @ 10A, 10V4V @ 250μA640pF @ 25V16A Tc44nC @ 10V100V10V±20V-------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Tc25nC @ 10V100V10V±20VYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA9.4A0.21Ohm38A100V91 mJROHS3 Compliant--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)-2016Active1 (Unlimited)MOSFET (Metal Oxide)25W TcN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V50V10V±20V---------------------------Non-RoHS CompliantSurface Mount8.2A
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