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IRFR3711Z

Infineon Technologies IRFR3711Z

Part Number:
IRFR3711Z
Manufacturer:
Infineon Technologies
Ventron No:
2492549-IRFR3711Z
Description:
MOSFET N-CH 20V 93A DPAK
ECAD Model:
Datasheet:
IRFR3711Z, IRFU3711Z

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Specifications
Infineon Technologies IRFR3711Z technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR3711Z.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    79W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.7m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.45V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2160pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    93A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    30A
  • Drain-source On Resistance-Max
    0.0057Ohm
  • Pulsed Drain Current-Max (IDM)
    370A
  • DS Breakdown Voltage-Min
    20V
  • Avalanche Energy Rating (Eas)
    140 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRFR3711Z Description
The StrongIRFETTM power MOSFET family is designed for high current capability and low RDS(on). For low frequency applications that demand performance and toughness, the IRFR3711Z is perfect. A wide range of applications, such as DC motors, battery management systems, inverters, and DC-DC converters, are covered by the extensive portfolio.

IRFR3711Z Features
Industry standard surface mount package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Optimized for broadest availability from distribution partners

IRFR3711Z Applications
Industrial
Automotive
Enterprise systems
Product Comparison
The three parts on the right have similar specifications to IRFR3711Z.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Reach Compliance Code
    Qualification Status
    Operating Temperature (Max)
    Supplier Device Package
    View Compare
  • IRFR3711Z
    IRFR3711Z
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    2
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    79W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    5.7m Ω @ 15A, 10V
    2.45V @ 250μA
    2160pF @ 10V
    93A Tc
    27nC @ 4.5V
    20V
    4.5V 10V
    ±20V
    TO-252AA
    30A
    0.0057Ohm
    370A
    20V
    140 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    IRFR024NTRRPBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    2
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    45W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    55V
    10V
    ±20V
    TO-252AA
    17A
    0.075Ohm
    68A
    55V
    71 mJ
    ROHS3 Compliant
    e3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    not_compliant
    Not Qualified
    175°C
    -
    IRFR3711Z vs IRFR024NTRRPBF
  • IRFR12N25DCTRLP
    IRFR12N25DCTRLP
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    IRFR3711Z vs IRFR12N25DCTRLP
  • IRFR12N25DTRPBF
    IRFR12N25DTRPBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFR3711Z vs IRFR12N25DTRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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