Infineon Technologies IRFR3710ZPBF

Name: IRFR3710ZPBF
Brand: Infineon Technologies
SKU: 2479363-IRFR3710ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR3710ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479363-IRFR3710ZPBF

Description:: MOSFET N-CH 100V 42A DPAK

ECAD Model:

Datasheet:: IRFR3710ZPBF

Specifications

Infineon Technologies IRFR3710ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR3710ZPBF.

Factory Lead Time
52 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
140W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
18m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2930pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRFR3710ZPBF Description
The IRFR3710ZPBF is a 100V single N-channel HEXFET? Power MOSFET utilizing the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. Its features combine to make this design an extremely efficient and reliable device for a wide variety of applications.

IRFR3710ZPBF Features
Advanced process technology
Ultra-low on-resistance
Repetitive avalanche allowed up to Tjmax
175°C Operating temperature
Fast Switching

IRFR3710ZPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Automotive

IRFR3710ZPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 15Milliohms;ID 56A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 18 mOhm 69 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N Channel Mosfet, 100V, 56A, D-Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 140W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-252; Current Id Max: 42A; Current Temperature: 25°C; External Depth: 10.5mm; External Length / Height: 2.55mm; External Width: 6.8mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Power Dissipation Ptot Max: 140W; Pulse Current Idm: 220A; SMD Marking: IRFR3710ZPBF; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to IRFR3710ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Reach Compliance Code

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Supplier Device Package

View Compare
IRFR3710ZPBF

Infineon Technologies

52 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tube

HEXFET®

2004

Discontinued

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

not_compliant

140W Tc

N-Channel

18m Ω @ 33A, 10V

4V @ 250μA

2930pF @ 25V

42A Tc

100nC @ 10V

100V

10V

±20V

ROHS3 Compliant

-

-
IRFR120NCTRLPBF

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

48W Tc

N-Channel

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Ta

25nC @ 10V

100V

10V

±20V

-

-

IRFR3710ZPBF vs IRFR120NCTRLPBF
IRFR12N25DTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

144W Tc

N-Channel

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

IRFR3710ZPBF vs IRFR12N25DTRRP
IRFR12N25DCTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

144W Tc

N-Channel

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

D-Pak

IRFR3710ZPBF vs IRFR12N25DCTRRP

Certification

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IRFR371~~(34)~~
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IRFR~~(57)~~
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Part Number	Manufacturers	Description	Stock	Price
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 56A 3-Pin(2 Tab) DPAK Tu RoHS: Compliant	140	10 $0.639 50 $0.596
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	MOSFET N-CH 100V 42A DPAK RoHS: Compliant	0
IRFR3710ZPBF. DISTI #IRFR3710ZPBF.	Infineon Technologies AG	TRENCH_MOSFETS ROHS COMPLIANT: YES	0
IRFR3710ZPBF. DISTI #IRFR3710ZPBF.	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 56A, D-PAK, Transistor Po	0	1 $1.65 10 $1.4 100 $1.12 500 $0.977 1000 $0.81 5000 $0.754 10000 $0.698
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 15 Mil RoHS: Compliant	10	1 $2.26 10 $1.99 100 $1.74 500 $1.51 1000 $1.33
IRFR3710ZPBF DISTI #IRFR3710ZPBF	International Rectifier	Power Field-Effect Transistor, 42A I(D), 100V, 0.0 RoHS: Compliant	45	1 $0.91 25 $0.84 100 $0.81 500 $0.78 1000 $0.74
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC RoHS: Compliant	0	1 $1.65 10 $1.4 100 $1.12 500 $0.977 1000 $0.81
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 56A DPAK, PK	150	5 $1.28 25 $1.02 100 $0.81 250 $0.758 500 $0.708
IRFR3710ZPBF DISTI #IRFR3710ZPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-252AA	24	1 $1.92 4 $1.44 11 $0.96
IRFR3710ZPBF DISTI #IRFR3710ZPBF	International Rectifier		430
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	MOSFET, N, 140W, D-PAK RoHS: Compliant	4	1 $2.62 10 $2.22 100 $1.78 500 $1.55 1000 $1.29 3000 $1.2 6000 $1.15 9000 $1.11
IRFR3710ZPBF. DISTI #IRFR3710ZPBF.	Infineon Technologies AG	MOSFET, N, D-PAK RoHS: Compliant	0	1 $2.62 10 $2.22 100 $1.78 500 $1.55 1000 $1.29 3000 $1.2 6000 $1.15 9000 $1.11
IRFR3710ZPBF DISTI #IRFR3710ZPBF	Infineon Technologies AG	MOSFET, N, 140W, D-PAK RoHS: Compliant	4	5 $1.16 25 $1.02 100 $0.81 250 $0.758 500 $0.708
IRFR3710ZPBF. DISTI #IRFR3710ZPBF.	Infineon Technologies AG	MOSFET, N, D-PAK RoHS: Compliant	3	5 $0.491 25 $0.446 100 $0.359 250 $0.335

Infineon Technologies IRFR3710ZPBF

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