Infineon Technologies IRFR3418PBF
- Part Number:
- IRFR3418PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071754-IRFR3418PBF
- Description:
- MOSFET N-CH 80V 70A DPAK
- Datasheet:
- IRFR3418PBF
Infineon Technologies IRFR3418PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR3418PBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.8W Ta 140W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs14mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3510pF @ 25V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs94nC @ 10V
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
IRFR3418PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3510pF @ 25V.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR3418PBF Features
a 80V drain to source voltage (Vdss)
IRFR3418PBF Applications
There are a lot of Infineon Technologies
IRFR3418PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3510pF @ 25V.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR3418PBF Features
a 80V drain to source voltage (Vdss)
IRFR3418PBF Applications
There are a lot of Infineon Technologies
IRFR3418PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFR3418PBF More Descriptions
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
MOSFET N-CH 80V 70A DPAK
MOSFET, N, 80V, 70A, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:70A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:D-PAK; Current, Idm Pulse:280A; Power Dissipation:140W; Power, Pd:140W; SMD Marking:IFRF3418; Thermal Resistance, Junction to Case A:1.05°C/W; Voltage, Vds Max:80V
MOSFET N-CH 80V 70A DPAK
MOSFET, N, 80V, 70A, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:70A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:D-PAK; Current, Idm Pulse:280A; Power Dissipation:140W; Power, Pd:140W; SMD Marking:IFRF3418; Thermal Resistance, Junction to Case A:1.05°C/W; Voltage, Vds Max:80V
The three parts on the right have similar specifications to IRFR3418PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)MountContinuous Drain Current (ID)RoHS StatusView Compare
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IRFR3418PBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 140W TcN-Channel14mOhm @ 18A, 10V5.5V @ 250μA3510pF @ 25V70A Tc94nC @ 10V80V10V±20V----
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V100V10V±20V---
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V---
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)-2016Active1 (Unlimited)MOSFET (Metal Oxide)25W TcN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V50V10V±20VSurface Mount8.2ANon-RoHS Compliant
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