Infineon Technologies IRFR3410TRPBF

Name: IRFR3410TRPBF
Brand: Infineon Technologies
SKU: 3070308-IRFR3410TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR3410TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3070308-IRFR3410TRPBF

Description:: MOSFET N-CH 100V 31A DPAK

ECAD Model:

Datasheet:: IRFR3410TRPBF

Specifications

Infineon Technologies IRFR3410TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR3410TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
39MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
31A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3W Ta 110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
39m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
31A
Threshold Voltage
4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Nominal Vgs
4 V
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
A single N-channel Power MOSFET with a low gate-to-drain charge to lower switching losses is the IRFR3410TRPBF from the HEXFET? family. High-frequency DC-to-DC converters can use it. An N-Channel MOSFET makes a current channel out of electrons. When the MOSFET is turned on and activated, this enables electrons to pass swiftly and readily through the current. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.

Features
Fully Characterized Capacitance Including Effective COSS to Simplify Design
Fully Characterized Avalanche Voltage and Current
Low Gate-to-Drain Charge to Reduce Switching Losses
Dynamic dV/dt Rating
Fast Switching
Fully Avalanche Rating

Applications
High Frequency DC-DC Converters
Lead-Free
Power Management
Small Motor Control
Solar Inverters
Automotive Applications

IRFR3410TRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N CH, 100V, 31A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Product Comparison

The three parts on the right have similar specifications to IRFR3410TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Terminal Finish

Terminal Position

Reach Compliance Code

Qualification Status

Configuration

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
IRFR3410TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

39MOhm

FET General Purpose Power

100V

MOSFET (Metal Oxide)

GULL WING

260

31A

30

R-PSSO-G2

1

3W Ta 110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

12 ns

N-Channel

SWITCHING

39m Ω @ 18A, 10V

4V @ 250μA

1690pF @ 25V

31A Tc

56nC @ 10V

27ns

10V

±20V

13 ns

40 ns

31A

4V

TO-252AA

20V

100V

100V

4 V

2.3876mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
IRFR12N25DTRPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

144W Tc

-

-

-

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

-

-

-

-

-

-

-

-

IRFR3410TRPBF vs IRFR12N25DTRPBF
IRFR010TRR

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

25W Tc

-

-

-

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

-

10V

±20V

-

-

8.2A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

50V

-

-

-

-

-

-

-

-

IRFR3410TRPBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

-

EAR99

-

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

260

14A

30

R-PSSO-G2

1

86W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

26ns

10V

±30V

-

-

14A

-

TO-252AA

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

not_compliant

Not Qualified

SINGLE WITH BUILT-IN DIODE

0.18Ohm

56A

130 mJ

IRFR3410TRPBF vs IRFR13N15DTR

Certification

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IRFR3410TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	125	1 $0.3571
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 31A DPAK RoHS: Compliant	1653	1 $1.14 10 $1.018 100 $0.8154 500 $0.6444 1000 $0.52004
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 31A DPAK RoHS: Compliant	1653	1 $1.14 10 $1.018 100 $0.8154 500 $0.6444 1000 $0.52004
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 31A DPAK RoHS: Compliant	0	2000 $0.47471
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	16000	2000 $0.3312
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	1950	23 $1.0353 50 $0.751 100 $0.7319 200 $0.7089
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	125	21 $0.3571
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	1000	2000 $0.3699 4000 $0.3689 8000 $0.3619 12000 $0.3549 20000 $0.3459
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0	2000 $0.3269 4000 $0.3259 8000 $0.3199 12000 $0.3139 20000 $0.3069
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 31 A, 100 V, 0.034 o	49	1 $0.721 10 $0.623 25 $0.579 50 $0.535 100 $0.491 250 $0.465 500 $0.44 1000 $0.359
IRFR3410TRPBF. DISTI #	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 34 Mil RoHS: Compliant	0	10 $1.14
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET 100V SINGLE N-CH 39mOhms 37nC RoHS: Compliant	1826	1 $0.94 10 $0.802 100 $0.616 500 $0.544 1000 $0.43 2000 $0.381 10000 $0.367
IRFR3410TRPBF DISTI #	International Rectifier	Power Field-Effect Transistor, 30A I(D), 100V, 0.0 RoHS: Compliant	420	1 $0.44 25 $0.41 100 $0.39 500 $0.37 1000 $0.36
IRFR3410TRPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 31A 100V DPAK, RL	220	50 $0.529 200 $0.467 500 $0.404
IRFR3410TRPBF DISTI #	International Rectifier		125
IRFR3410TRPBF DISTI #	International Rectifier		1507
IRFR3410TRPBF DISTI #	Infineon Technologies AG	N-Ch 100V 31 110W 0,039R TO252AA RoHS: Compliant	2550	50 $0.414 100 $0.354 500 $0.324 3000 $0.312
IRFR3410TRPBF DISTI #	International Rectifier	INSTOCK	3801
IRFR3410TRPBF DISTI #	INFINEON/IR	D-PAK (TO-252) RoHS: Compliant	2000	2000 $0.44
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 100V, 31A, TO-252AA-3 RoHS: Compliant	104	5 $0.587 25 $0.519 100 $0.45 250 $0.424 500 $0.398
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	1950	5 $0.87 10 $0.812 50 $0.589 100 $0.574 200 $0.556 500 $0.49
IRFR3410TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	16000	2000 $0.456
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 100V, 31A, TO-252AA-3 RoHS: Compliant	49	1 $1.5 10 $1.28 100 $0.975 500 $0.861 1000 $0.681 2000 $0.603 10000 $0.581 24000 $0.562
IRFR3410TRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 100V, 31A, TO-252AA-3 RoHS: Compliant	0	1 $1.5 10 $1.28 100 $0.975 500 $0.861 1000 $0.681 2000 $0.603 10000 $0.581 24000 $0.562

IRFR341~~(19)~~
IRFR34~~(19)~~
IRFR3~~(58)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR3410TRPBF

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