Infineon Technologies IRFR2407TRLPBF

Name: IRFR2407TRLPBF
Brand: Infineon Technologies
SKU: 2851108-IRFR2407TRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR2407TRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2851108-IRFR2407TRLPBF

Description:: MOSFET N-CH 75V 42A DPAK

ECAD Model:

Datasheet:: IRFR2407TRLPBF

Specifications

Infineon Technologies IRFR2407TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2407TRLPBF.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2000
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
26m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Drain to Source Voltage (Vdss)
75V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
30A
Drain-source On Resistance-Max
0.026Ohm
Pulsed Drain Current-Max (IDM)
170A
DS Breakdown Voltage-Min
75V
Avalanche Energy Rating (Eas)
130 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR2407TRLPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 2400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 30A.There is no pulsed drain current maximum for this device based on its rated peak drain current 170A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 75V.The drain-to-source voltage (Vdss) of this transistor needs to be at 75V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFR2407TRLPBF Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 170A.
a 75V drain to source voltage (Vdss)

IRFR2407TRLPBF Applications
There are a lot of Infineon Technologies
IRFR2407TRLPBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRFR2407TRLPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 75V 26 mOhm 74 nC HEXFET® Power Mosfet - DPAK
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRFR2407TRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Continuous Drain Current (ID)

Voltage - Rated DC

Current Rating

Rise Time

Lead Free

View Compare
IRFR2407TRLPBF

Infineon Technologies

12 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

110W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

26m Ω @ 25A, 10V

4V @ 250μA

2400pF @ 25V

42A Tc

110nC @ 10V

75V

10V

±20V

TO-252AA

30A

0.026Ohm

170A

75V

130 mJ

ROHS3 Compliant

-

-

-

-

-

-

-
IRFR12N25DTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR2407TRLPBF vs IRFR12N25DTRRP
IRFR010TRR

Vishay Siliconix

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

8.2A

-

-

-

-

IRFR2407TRLPBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

Surface Mount

14A

150V

14A

26ns

Contains Lead

IRFR2407TRLPBF vs IRFR13N15DTR

Certification

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IRFR240~~(16)~~
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Part Number	Manufacturers	Description	Stock	Price
IRFR2407TRLPBF DISTI #IRFR2407TRLPBF	Infineon Technologies AG	MOSFET N-CH 75V 42A DPAK RoHS: Compliant	0	3000 $0.65897
IRFR2407TRLPBF DISTI #IRFR2407TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 42A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	0	3000 $0.4929 6000 $0.4749 12000 $0.4579 18000 $0.4419 30000 $0.4339
IRFR2407TRLPBF DISTI #IRFR2407TRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 42A 3-Pin(2 Tab) DPAK T/R (A RoHS: Compliant	0	3000 $0.5969 6000 $0.4889 12000 $0.4479 18000 $0.4129 30000 $0.3839
IRFR2407TRLPBF DISTI #IRFR2407TRLPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 0.0218O RoHS: Compliant	0	3000 $1.41
IRFR2407TRLPBF DISTI #IRFR2407TRLPBF	Infineon Technologies AG	MOSFET MOSFT 75V 42A 26mOhm 74nC RoHS: Compliant	2411	1 $1.41 10 $1.2 100 $0.921 500 $0.814 1000 $0.642
IRFR2407TRLPBF DISTI #IRFR2407TRLPBF	Infineon Technologies AG	N-CH 75V 42A 26mOhm TO252 RoHS: Compliant	3000	3000 $0.6881 6000 $0.6487 9000 $0.6094 12000 $0.5505 15000 $0.5308

Infineon Technologies IRFR2407TRLPBF

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