Infineon Technologies IRFR2407TRL
- Part Number:
- IRFR2407TRL
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492040-IRFR2407TRL
- Description:
- MOSFET N-CH 75V 42A DPAK
- Datasheet:
- IRFR2407TRL
Infineon Technologies IRFR2407TRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2407TRL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2000
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC75V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating42A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time90ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)42A
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)30A
- Drain-source On Resistance-Max0.026Ohm
- Pulsed Drain Current-Max (IDM)170A
- Avalanche Energy Rating (Eas)130 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR2407TRL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 2400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.As shown in the table below, the drain current of this device is 30A.There is no pulsed drain current maximum for this device based on its rated peak drain current 170A.Using drive voltage (10V), this device helps reduce its power consumption.
IRFR2407TRL Features
the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 42A
based on its rated peak drain current 170A.
IRFR2407TRL Applications
There are a lot of Infineon Technologies
IRFR2407TRL applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 2400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.As shown in the table below, the drain current of this device is 30A.There is no pulsed drain current maximum for this device based on its rated peak drain current 170A.Using drive voltage (10V), this device helps reduce its power consumption.
IRFR2407TRL Features
the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 42A
based on its rated peak drain current 170A.
IRFR2407TRL Applications
There are a lot of Infineon Technologies
IRFR2407TRL applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFR2407TRL More Descriptions
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 75V 42A 3-Pin(2 Tab) DPAK T/R
Compliant Surface Mount Contains Lead 90 ns 26 mΩ TO-252-3 42 A 2.4 nF
Trans MOSFET N-CH 75V 42A 3-Pin(2 Tab) DPAK T/R
Compliant Surface Mount Contains Lead 90 ns 26 mΩ TO-252-3 42 A 2.4 nF
The three parts on the right have similar specifications to IRFR2407TRL.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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IRFR2407TRLSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power75VMOSFET (Metal Oxide)SINGLEGULL WING260not_compliant42A30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING26m Ω @ 25A, 10V4V @ 250μA2400pF @ 25V42A Tc110nC @ 10V90ns10V±20V42ATO-252AA30A0.026Ohm170A130 mJNon-RoHS CompliantContains Lead---
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------144W Tc--N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V--------D-Pak250V
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------144W Tc--N-Channel-260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V---------250V
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)-2016-Active1 (Unlimited)------MOSFET (Metal Oxide)----------25W Tc--N-Channel-200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-10V±20V8.2A-----Non-RoHS Compliant--50V
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