Vishay Siliconix IRFR214
- Part Number:
- IRFR214
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586843-IRFR214
- Description:
- MOSFET N-CH 250V 2.2A DPAK
- Datasheet:
- IRFR214
Vishay Siliconix IRFR214 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR214.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC250V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2.2A
- Number of Channels1
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.2A Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time7.6ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)2.2A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage250V
- Input Capacitance140pF
- Drain to Source Resistance2Ohm
- Rds On Max2 Ω
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR214 Overview
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR214 Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a 250V drain to source voltage (Vdss)
IRFR214 Applications
There are a lot of Vishay Siliconix
IRFR214 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR214 Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a 250V drain to source voltage (Vdss)
IRFR214 Applications
There are a lot of Vishay Siliconix
IRFR214 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFR214 More Descriptions
Trans MOSFET N-CH 250V 2.2A 3-Pin(2 Tab) DPAK
OEMs, CMs ONLY (NO BROKERS)
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IRFR214.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesView Compare
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IRFR214Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak1.437803g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C250VMOSFET (Metal Oxide)2.2A12.5W Ta 25W TcSingle7 nsN-Channel2Ohm @ 1.3A, 10V4V @ 250μA140pF @ 25V2.2A Tc8.2nC @ 10V7.6ns250V10V±20V7 ns16 ns2.2A20V250V140pF2Ohm2 Ω2.39mm6.73mm6.22mmNon-RoHS CompliantContains Lead--
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc--N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-------------HEXFET®
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc--N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-------------HEXFET®
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc--N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-------------HEXFET®
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