Vishay Siliconix IRFR210TRPBF
- Part Number:
- IRFR210TRPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2481726-IRFR210TRPBF
- Description:
- MOSFET N-CH 200V 2.6A DPAK
- Datasheet:
- IRFR210TRPBF
Vishay Siliconix IRFR210TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR210TRPBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.5Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time8.2 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.6A Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time17ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8.9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)2.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Input Capacitance140pF
- Drain to Source Resistance1.5Ohm
- Rds On Max1.5 Ω
- Height2.39mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFR210TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 140pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.6A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1.5Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR210TRPBF Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFR210TRPBF Applications
There are a lot of Vishay Siliconix
IRFR210TRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 140pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.6A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1.5Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR210TRPBF Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFR210TRPBF Applications
There are a lot of Vishay Siliconix
IRFR210TRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFR210TRPBF More Descriptions
Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - TO-252
IRFR210TRPBF N-channel MOSFET Transistor, 2.6 A, 200 V, 3-Pin TO-252 | Siliconix / Vishay IRFR210TRPBF
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IRFR210TRPBF N-channel MOSFET Transistor, 2.6 A, 200 V, 3-Pin TO-252 | Siliconix / Vishay IRFR210TRPBF
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The three parts on the right have similar specifications to IRFR210TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSeriesView Compare
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IRFR210TRPBF8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)1.5Ohm150°C-55°CMOSFET (Metal Oxide)112.5W Ta 25W TcSingle2.5W8.2 nsN-Channel1.5Ohm @ 1.6A, 10V4V @ 250μA140pF @ 25V2.6A Tc8.2nC @ 10V17ns200V10V±20V8.9 ns14 ns2.6A20V200V140pF1.5Ohm1.5 Ω2.39mm6.73mm6.22mmNoROHS3 CompliantLead Free--
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V--------------HEXFET®
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--48W Tc---N-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-100V10V±20V--------------HEXFET®
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V--------------HEXFET®
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