IRFR18N15DTRPBF

Infineon Technologies IRFR18N15DTRPBF

Part Number:
IRFR18N15DTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2487463-IRFR18N15DTRPBF
Description:
MOSFET N-CH 150V 18A DPAK
ECAD Model:
Datasheet:
IRFR18N15DTRPBF

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Specifications
Infineon Technologies IRFR18N15DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR18N15DTRPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    125mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    18A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    125m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    5.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 10V
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    9.8 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    18A
  • Threshold Voltage
    5.5V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    72A
  • Dual Supply Voltage
    150V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Nominal Vgs
    5.5 V
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRFR18N15DTRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5.5V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFR18N15DTRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 72A.
a threshold voltage of 5.5V


IRFR18N15DTRPBF Applications
There are a lot of Infineon Technologies
IRFR18N15DTRPBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR18N15DTRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W
Single N-Channel 150V 0.125 Ohm 28 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):125mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Product Comparison
The three parts on the right have similar specifications to IRFR18N15DTRPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    Terminal Position
    Reach Compliance Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Supplier Device Package
    View Compare
  • IRFR18N15DTRPBF
    IRFR18N15DTRPBF
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    125mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    260
    18A
    30
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    8.8 ns
    N-Channel
    SWITCHING
    125m Ω @ 11A, 10V
    5.5V @ 250μA
    900pF @ 25V
    18A Tc
    43nC @ 10V
    25ns
    10V
    ±30V
    9.8 ns
    15 ns
    18A
    5.5V
    TO-252AA
    30V
    150V
    72A
    150V
    200 mJ
    5.5 V
    2.3876mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    45W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-252AA
    -
    -
    68A
    -
    71 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    SINGLE
    not_compliant
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    55V
    17A
    0.075Ohm
    55V
    -
  • IRFR12N25DCTRLP
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    D-Pak
  • IRFR12N25DTRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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