Infineon Technologies IRFR18N15DTRPBF
- Part Number:
- IRFR18N15DTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487463-IRFR18N15DTRPBF
- Description:
- MOSFET N-CH 150V 18A DPAK
- Datasheet:
- IRFR18N15DTRPBF
Infineon Technologies IRFR18N15DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR18N15DTRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance125mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating18A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Case ConnectionDRAIN
- Turn On Delay Time8.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs125m Ω @ 11A, 10V
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)9.8 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)18A
- Threshold Voltage5.5V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)72A
- Dual Supply Voltage150V
- Avalanche Energy Rating (Eas)200 mJ
- Nominal Vgs5.5 V
- Height2.3876mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRFR18N15DTRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5.5V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR18N15DTRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 72A.
a threshold voltage of 5.5V
IRFR18N15DTRPBF Applications
There are a lot of Infineon Technologies
IRFR18N15DTRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5.5V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR18N15DTRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 72A.
a threshold voltage of 5.5V
IRFR18N15DTRPBF Applications
There are a lot of Infineon Technologies
IRFR18N15DTRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR18N15DTRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W
Single N-Channel 150V 0.125 Ohm 28 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):125mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Single N-Channel 150V 0.125 Ohm 28 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):125mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
The three parts on the right have similar specifications to IRFR18N15DTRPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountAdditional FeatureTerminal PositionReach Compliance CodeQualification StatusOperating Temperature (Max)ConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinSupplier Device PackageView Compare
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IRFR18N15DTRPBFSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004e3Not For New Designs1 (Unlimited)2EAR99125mOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power150VMOSFET (Metal Oxide)GULL WING26018A30R-PSSO-G21110W TcSingleENHANCEMENT MODE110WDRAIN8.8 nsN-ChannelSWITCHING125m Ω @ 11A, 10V5.5V @ 250μA900pF @ 25V18A Tc43nC @ 10V25ns10V±30V9.8 ns15 ns18A5.5VTO-252AA30V150V72A150V200 mJ5.5 V2.3876mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIEDR-PSSO-G2145W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-10V±20V----TO-252AA--68A-71 mJ------ROHS3 Compliant-YESAVALANCHE RATED, ULTRA LOW RESISTANCESINGLEnot_compliantNot Qualified175°CSINGLE WITH BUILT-IN DIODE55V17A0.075Ohm55V-
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)------144W Tc-----N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V-------------------------250V---D-Pak
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)------144W Tc-----N-Channel-260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V-------------------------250V----
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