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IRFR13N15DPBF

Infineon Technologies IRFR13N15DPBF

Part Number:
IRFR13N15DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479841-IRFR13N15DPBF
Description:
MOSFET N-CH 150V 14A DPAK
ECAD Model:
Datasheet:
IRFR13N15DPBF

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Specifications
Infineon Technologies IRFR13N15DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR13N15DPBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2000
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Power Dissipation-Max
    86W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 8.3A, 10V
  • Vgs(th) (Max) @ Id
    5.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • RoHS Status
    ROHS3 Compliant
Description
IRFR13N15DPBF Description
IRFR13N15DPBF is a 150v HEXFET? Power MOSFET. The Infineon IRFR13N15DPBF is designed for high-frequency DC-DC converters applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFR13N15DPBF is in the TO-252-3 package with 86W power dissipation.

IRFR13N15DPBF Features
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature

IRFR13N15DPBF Applications
Cellular phones 
Laptop computers
Photovoltaic systems 
Wind turbines
Shunt voltage regulator and the series voltage regulator
IRFR13N15DPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.18Ohm;ID 14A;D-Pak (TO-252AA);PD 86W
Single N-Channel 150 V 0.18 Ohm 19 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 150V, 14A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:150V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:86W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Junction to Case Thermal Resistance A:1.75°C/W; On State resistance @ Vgs = 10V:180ohm; Package / Case:DPAK; Power Dissipation Pd:86W; Power Dissipation Pd:86W; Pulse Current Idm:56A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFR13N15DPBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Reach Compliance Code
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Mount
    Continuous Drain Current (ID)
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Rise Time
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    View Compare
  • IRFR13N15DPBF
    IRFR13N15DPBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    not_compliant
    86W Tc
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    150V
    10V
    ±30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR120NCTRLPBF
    IRFR120NCTRLPBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    48W Tc
    N-Channel
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Ta
    25nC @ 10V
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFR13N15DPBF vs IRFR120NCTRLPBF
  • IRFR010TRR
    IRFR010TRR
    Vishay Siliconix
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    25W Tc
    N-Channel
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    50V
    10V
    ±20V
    Non-RoHS Compliant
    Surface Mount
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFR13N15DPBF vs IRFR010TRR
  • IRFR13N15DTR
    IRFR13N15DTR
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    not_compliant
    86W Tc
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    -
    10V
    ±30V
    Non-RoHS Compliant
    Surface Mount
    14A
    SILICON
    e3
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    150V
    SINGLE
    GULL WING
    260
    14A
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    26ns
    TO-252AA
    0.18Ohm
    56A
    130 mJ
    Contains Lead
    IRFR13N15DPBF vs IRFR13N15DTR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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