Vishay Siliconix IRFR120TR
- Part Number:
- IRFR120TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853285-IRFR120TR
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Datasheet:
- IRFR120TR
Vishay Siliconix IRFR120TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR120TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating7.7A
- Number of Elements1
- Number of Channels1
- Voltage100V
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Current77A
- Power Dissipation2.5W
- Turn On Delay Time6.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.7A Tc
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)7.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Input Capacitance360pF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR120TR Overview
A device's maximum input capacitance is 360pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR120TR Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFR120TR Applications
There are a lot of Vishay Siliconix
IRFR120TR applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 360pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR120TR Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFR120TR Applications
There are a lot of Vishay Siliconix
IRFR120TR applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR120TR More Descriptions
Trans MOSFET N-CH 100V 7.7A 3-Pin (2 Tab) DPAK T/R
MOSFET N-CHANNEL 100V
100V 7.700A D-PAK
MOSFET N-CHANNEL 100V
100V 7.700A D-PAK
The three parts on the right have similar specifications to IRFR120TR.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFR120TRSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C100VMOSFET (Metal Oxide)7.7A11100V2.5W Ta 42W TcSingle77A2.5W6.8 nsN-Channel270mOhm @ 4.6A, 10V4V @ 250μA360pF @ 25V7.7A Tc16nC @ 10V27ns100V10V±20V17 ns18 ns7.7A20V100V360pF270mOhm270 mΩ2.39mm6.73mm6.22mmNon-RoHS CompliantContains Lead-----------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----48W Tc----N-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-100V10V±20V-------------HEXFET®---------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----144W Tc----N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-------------HEXFET®---------------------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)--150VMOSFET (Metal Oxide)14A1--86W Tc----N-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns-10V±30V--14A--------Non-RoHS CompliantContains LeadHEXFET®SILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA0.18Ohm56A130 mJ
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