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IRFR1205TRPBF

Infineon Technologies IRFR1205TRPBF

Part Number:
IRFR1205TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070137-IRFR1205TRPBF
Description:
MOSFET N-CH 55V 44A DPAK
ECAD Model:
Datasheet:
IRFR1205TRPBF

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Specifications
Infineon Technologies IRFR1205TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR1205TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    27mOhm
  • Additional Feature
    AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    37A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    107W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    69W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    44A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • Rise Time
    69ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    60 ns
  • Turn-Off Delay Time
    47 ns
  • Continuous Drain Current (ID)
    37A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    20A
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Recovery Time
    98 ns
  • Nominal Vgs
    4 V
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.8mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRFR1205TRPBF Description
IRFR1205TRPBF belongs to the family of HEXFET? power MOSFETs provided by Infineon Technologies based on advanced processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and ruggedized device design. Therefore, it is well suited for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.

IRFR1205TRPBF Features
Low RDS (on)
Low on-state resistance per silicon area
Advanced switching performance
Ruggedized device design
Available in the D-Pak package

IRFR1205TRPBF Applications
High-frequency synchronous buck converters for computer processor power
High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use
IRFR1205TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W
Single N-Channel 55 V 0.027 Ohm 65nC HEXFET® Power Mosfet - TO-252AA
Trans MOSFET N-CH 55V 44A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 55V 44A DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:44A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes |Infineon IRFR1205TRPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 44 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 60 / Rise Time ns = 69 / Turn-OFF Delay Time ns = 47 / Turn-ON Delay Time ns = 7.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 107
Product Comparison
The three parts on the right have similar specifications to IRFR1205TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Reach Compliance Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    View Compare
  • IRFR1205TRPBF
    IRFR1205TRPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    27mOhm
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    GULL WING
    260
    37A
    30
    R-PSSO-G2
    1
    107W Tc
    Single
    ENHANCEMENT MODE
    69W
    DRAIN
    7.3 ns
    N-Channel
    SWITCHING
    27m Ω @ 26A, 10V
    4V @ 250μA
    1300pF @ 25V
    44A Tc
    65nC @ 10V
    69ns
    10V
    ±20V
    60 ns
    47 ns
    37A
    4V
    TO-252AA
    20V
    20A
    55V
    55V
    98 ns
    4 V
    2.3876mm
    6.7056mm
    6.8mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    IRFR024NTRRPBF
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    -
    EAR99
    -
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    45W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-252AA
    -
    17A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    not_compliant
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    55V
    0.075Ohm
    68A
    55V
    71 mJ
    -
    IRFR1205TRPBF vs IRFR024NTRRPBF
  • IRFR12N25DCTRLP
    IRFR12N25DCTRLP
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    -
    D-Pak
    IRFR1205TRPBF vs IRFR12N25DCTRLP
  • IRFR13N15DTR
    IRFR13N15DTR
    Infineon Technologies
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    260
    14A
    30
    R-PSSO-G2
    1
    86W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    10V
    ±30V
    -
    -
    14A
    -
    TO-252AA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    not_compliant
    Not Qualified
    -
    SINGLE WITH BUILT-IN DIODE
    -
    0.18Ohm
    56A
    -
    130 mJ
    -
    IRFR1205TRPBF vs IRFR13N15DTR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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