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IRFR1018EPBF

Infineon Technologies IRFR1018EPBF

Part Number:
IRFR1018EPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479305-IRFR1018EPBF
Description:
MOSFET N-CH 60V 79A DPAK
ECAD Model:
Datasheet:
IRFR1018EPBF

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Specifications
Infineon Technologies IRFR1018EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR1018EPBF.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.4m Ω @ 47A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2290pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    56A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
  • Rise Time
    35ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    46 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    79A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    56A
  • Drain-source On Resistance-Max
    0.0084Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Avalanche Energy Rating (Eas)
    88 mJ
  • Recovery Time
    39 ns
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFR1018EPBF Description
The IRFR1018EPBF MOSFET is a member of the StrongIRFET? power MOSFET family, which has been tuned for low RDS(on) and high current capabilities. The IRFR1018EPBF is excellent for low frequency applications that require performance and durability. The extensive portfolio covers a wide range of applications such as DC motors, battery management systems, inverters, and DC-DC converters.

IRFR1018EPBF Features
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry-standard surface mount package
Silicon optimized for applications switching below <100kHz

IRFR1018EPBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFR1018EPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS /-20
Single N-Channel 60 V 8.4 mOhm 69 nC HEXFET® Power Mosfet - TO-252-3, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:DPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFR1018EPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • IRFR1018EPBF
    IRFR1018EPBF
    Infineon Technologies
    15 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    8.4m Ω @ 47A, 10V
    4V @ 100μA
    2290pF @ 50V
    56A Tc
    69nC @ 10V
    35ns
    10V
    ±20V
    46 ns
    55 ns
    79A
    4V
    TO-252AA
    20V
    56A
    0.0084Ohm
    60V
    88 mJ
    39 ns
    2.3876mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • IRFR12N25DCTRLP
    IRFR12N25DCTRLP
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    250V
    IRFR1018EPBF vs IRFR12N25DCTRLP
  • IRFR12N25DTRPBF
    IRFR12N25DTRPBF
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    IRFR1018EPBF vs IRFR12N25DTRPBF
  • IRFR010TRR
    IRFR010TRR
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    25W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    50V
    IRFR1018EPBF vs IRFR010TRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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