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Infineon Technologies IRFR1010ZPBF
- Part Number:
- IRFR1010ZPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483323-IRFR1010ZPBF
- Description:
- MOSFET N-CH 55V 42A DPAK
- ECAD Model:
-
- Datasheet:
- IRFR1010ZPBF
Infineon Technologies IRFR1010ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR1010ZPBF.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating42A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max140W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation140W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 42A, 10V
- Vgs(th) (Max) @ Id4V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Rise Time76ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)48 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)42A
- Threshold Voltage4V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0075Ohm
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Avalanche Energy Rating (Eas)220 mJ
- Nominal Vgs4 V
- Height2.3876mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The IRFR1010ZPBF is a HEXFET? Power MOSFET. The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.
Features
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Applications
Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Switch, buck and synchronous rectification Uninterruptible Power Supplies (UPS) Small motor control
The IRFR1010ZPBF is a HEXFET? Power MOSFET. The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.
Features
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Applications
Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Switch, buck and synchronous rectification Uninterruptible Power Supplies (UPS) Small motor control
IRFR1010ZPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:360A; SMD Marking:IRFR1010ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:360A; SMD Marking:IRFR1010ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFR1010ZPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Supplier Device PackageView Compare
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IRFR1010ZPBF14 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTubeHEXFET®2004e3Discontinued1 (Unlimited)2SMD/SMTEAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose Power55VMOSFET (Metal Oxide)GULL WING26042A30R-PSSO-G21140W TcSingleENHANCEMENT MODE140WDRAIN17 nsN-ChannelSWITCHING7.5m Ω @ 42A, 10V4V @ 100μA2840pF @ 25V42A Tc95nC @ 10V76ns10V±20V48 ns42 ns42A4VTO-252AA20V0.0075Ohm55V55V220 mJ4 V2.3876mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantLead Free--- -
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)------48W Tc-----N-Channel-210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-10V±20V------------------100V-
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)------144W Tc-----N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V------------------250VD-Pak
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~150°C TJTape & Reel (TR)-2016-Active1 (Unlimited)-------MOSFET (Metal Oxide)------25W Tc-----N-Channel-200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-10V±20V--8.2A-------------Non-RoHS Compliant-50V-
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