Vishay Siliconix IRFR010TR
- Part Number:
- IRFR010TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071430-IRFR010TR
- Description:
- MOSFET N-CH 50V 8.2A DPAK
- ECAD Model:
-
- Datasheet:
- IRFR010TR
Vishay Siliconix IRFR010TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR010TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Voltage - Rated DC50V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Current Rating8.2A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation-Max25W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200m Ω @ 4.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8.2A Tc
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)8.2A
- JEDEC-95 CodeTO-252AA
- Drain-source On Resistance-Max0.2Ohm
- Pulsed Drain Current-Max (IDM)33A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR010TR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8.2A.Peak drain current for this device is 33A, which is its maximum pulsed drain current.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR010TR Features
a continuous drain current (ID) of 8.2A
based on its rated peak drain current 33A.
IRFR010TR Applications
There are a lot of Vishay Siliconix
IRFR010TR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8.2A.Peak drain current for this device is 33A, which is its maximum pulsed drain current.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR010TR Features
a continuous drain current (ID) of 8.2A
based on its rated peak drain current 33A.
IRFR010TR Applications
There are a lot of Vishay Siliconix
IRFR010TR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFR010TR More Descriptions
Trans MOSFET N-CH 50V 8.2A 3-Pin(2 Tab) DPAK T/R
French Electronic Distributor since 1988
MOSFET N-CHANNEL 60V
French Electronic Distributor since 1988
MOSFET N-CHANNEL 60V
The three parts on the right have similar specifications to IRFR010TR.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)RoHS StatusLead FreeSupplier Device PackageSeriesDrain to Source Voltage (Vdss)View Compare
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IRFR010TRSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~150°C TJTape & Reel (TR)2016e0Obsolete1 (Unlimited)2EAR99TIN LEAD50VMOSFET (Metal Oxide)SINGLEGULL WING2358.2ANOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE25W TcENHANCEMENT MODEN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V10V±20V8.2ATO-252AA0.2Ohm33ANon-RoHS CompliantContains Lead---- -
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2001-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------144W Tc-N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V10V±30V------D-PakHEXFET®250V
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------144W Tc-N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V10V±30V-------HEXFET®250V
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2001-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------144W Tc-N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V10V±30V------D-PakHEXFET®250V
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