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FDS6690A

Fairchild/ON Semiconductor FDS6690A

Part Number:
FDS6690A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813651-FDS6690A
Description:
MOSFET N-CH 30V 11A 8-SOIC
ECAD Model:
Datasheet:
FDS6690A

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Specifications
Fairchild/ON Semiconductor FDS6690A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6690A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2007
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    12.5MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    11A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12.5m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1205pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 5V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD17559Q5 Description
The CSD17559Q5 is a SON NexFETTM power MOSFET with a 30 V, 0.95 mΩ, 5 x 6 mm package designed to minimize losses in synchronous rectification and other power conversion applications.
CSD17559Q5 Features
Extremely Low Resistance
Ultra-L ow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm x 6 mm Plastic Package


CSD17559Q5 Applications
Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications

FDS6690A More Descriptions
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Product Comparison
The three parts on the right have similar specifications to FDS6690A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • FDS6690A
    FDS6690A
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2007
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    12.5MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    11A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    9 ns
    N-Channel
    SWITCHING
    12.5m Ω @ 11A, 10V
    3V @ 250μA
    1205pF @ 15V
    11A Ta
    16nC @ 5V
    5ns
    4.5V 10V
    ±20V
    9 ns
    28 ns
    11A
    1.9V
    20V
    30V
    30V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6064N3
    FDS6064N3
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    4m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    unknown
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    20V
    23A
    0.004Ohm
    20V
    FDS6690A vs FDS6064N3
  • FDS6681Z
    FDS6681Z
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    SO-8
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS6690A vs FDS6681Z
  • FDS6670AS
    FDS6670AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2005
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    9MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    13.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    5ns
    4.5V 10V
    ±20V
    18 ns
    27 ns
    13.5A
    -
    20V
    30V
    -
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS6690A vs FDS6670AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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