Fairchild/ON Semiconductor FDS6689S
- Part Number:
- FDS6689S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2488684-FDS6689S
- Description:
- MOSFET N-CH 30V 16A 8SOIC
- Datasheet:
- FDS6689S
Fairchild/ON Semiconductor FDS6689S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6689S.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.4m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3.29pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)16A
- Drain-source On Resistance-Max0.0054Ohm
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDS6689S Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3.29pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 16A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDS6689S Features
a 30V drain to source voltage (Vdss)
FDS6689S Applications
There are a lot of Rochester Electronics, LLC
FDS6689S applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3.29pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 16A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDS6689S Features
a 30V drain to source voltage (Vdss)
FDS6689S Applications
There are a lot of Rochester Electronics, LLC
FDS6689S applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
FDS6689S More Descriptions
MOSFET N-CH 30V 16A 8SOIC
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, SMD (S1)MOSFETs 30V N-Ch PowerTrench SyncFET
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, SMD (S1)
The three parts on the right have similar specifications to FDS6689S.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusSeriesCase ConnectionPulsed Drain Current-Max (IDM)Lifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeResistanceSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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FDS6689SSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING5.4m Ω @ 16A, 10V3V @ 1mA3.29pF @ 15V16A Ta78nC @ 10V30V4.5V 10V±20V16A0.0054Ohm30VROHS3 Compliant--------------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALGULL WING260-NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEN-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V20V1.8V 4.5V±8V23A0.0035Ohm20VROHS3 CompliantPowerTrench®DRAIN60A----------------------------
-
-SO-8---Tape & Reel (TR)--------------------------------RoHS Compliant-------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)e4yesActive1 (Unlimited)8Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUALGULL WING------1-2.5W TaENHANCEMENT MODEN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V-4.5V 10V±20V---ROHS3 CompliantPowerTrench®, SyncFET™--ACTIVE (Last Updated: 1 day ago)18 WeeksSurface Mount8130mg2004EAR9912MOhmFET General Purpose Power30V10ASingle2.5W8 ns5ns6 ns25 ns10A1.6V20V30V1.6 V1.5mm5mm4mmNo SVHCNoLead Free
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