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FDS6682

Fairchild/ON Semiconductor FDS6682

Part Number:
FDS6682
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483868-FDS6682
Description:
MOSFET N-CH 30V 14A 8SOIC
ECAD Model:
Datasheet:
FDS6682

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Part Pictures
  • FDS6682 Detail Images
Specifications
Fairchild/ON Semiconductor FDS6682 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6682.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Package / Case
    SOIC
  • Number of Pins
    8
  • Weight
    130mg
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    7.5MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    1W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    14A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5mW
  • Turn On Delay Time
    10 ns
  • Transistor Application
    SWITCHING
  • Rise Time
    7ns
  • Drain to Source Voltage (Vdss)
    30V
  • Polarity/Channel Type
    N-CHANNEL
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    44 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Input Capacitance
    2.31nF
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Resistance
    5.7mOhm
  • Rds On Max
    7.5 mΩ
  • Nominal Vgs
    1.7 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The FDS6682 is an N-Channel PowerTrench? MOSFET, 30V, 14A, 7.5m|?. With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. It has been designed to operate as a "low side" synchronous rectifier, offering a very low RDS(ON) in a compact size.

Features
Low gate charge (22 nC typical)
High performance trench technology for extremelylow RDS(ON)
High power and current handling capability
14 A, 30 V
RDS(ON) = 7.5 m|? @ VGS = 10 V
RDS(ON) = 9.0 m|? @ VGS = 4.5 V

Applications
This product is general usage and suitable for many different applications
DC/DC Converters
Small motor control
Solar inverters
Automotive applications
FDS6682 More Descriptions
N-Channel 30 V 7.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET, 30V, 14A, 7.5mΩ
MOSFET N-CH 30V 14A 8SOIC / Trans MOSFET N-CH 30V 14A 8-Pin SOIC T/R
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDS6682 Detail Images
Product Comparison
The three parts on the right have similar specifications to FDS6682.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Package / Case
    Number of Pins
    Weight
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Mounting Type
    Transistor Element Material
    Operating Temperature
    Series
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • FDS6682
    FDS6682
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    SOIC
    8
    130mg
    Tape & Reel (TR)
    2004
    e4
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    7.5MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    150°C
    -55°C
    FET General Purpose Power
    30V
    1W
    DUAL
    GULL WING
    14A
    1
    Single
    ENHANCEMENT MODE
    2.5mW
    10 ns
    SWITCHING
    7ns
    30V
    N-CHANNEL
    16 ns
    44 ns
    14A
    1.7V
    20V
    30V
    30V
    2.31nF
    METAL-OXIDE SEMICONDUCTOR
    5.7mOhm
    7.5 mΩ
    1.7 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6375
    FDS6375
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    Tape & Reel (TR)
    2001
    e4
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    24MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    Other Transistors
    -20V
    -
    DUAL
    GULL WING
    -8A
    1
    Single
    ENHANCEMENT MODE
    2.5W
    12 ns
    SWITCHING
    9ns
    20V
    -
    57 ns
    124 ns
    8A
    -700mV
    8V
    -20V
    -20V
    -
    -
    -
    -
    -700 mV
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    Surface Mount
    SILICON
    -55°C~175°C TJ
    PowerTrench®
    MOSFET (Metal Oxide)
    2.5W Ta
    P-Channel
    24m Ω @ 8A, 4.5V
    1.5V @ 250μA
    2694pF @ 10V
    8A Ta
    36nC @ 4.5V
    2.5V 4.5V
    ±8V
    8A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS6682 vs FDS6375
  • FDS6064N7
    FDS6064N7
    Fairchild/ON Semiconductor
    -
    -
    -
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    Tape & Reel (TR)
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    -
    -
    -
    DUAL
    GULL WING
    -
    1
    -
    ENHANCEMENT MODE
    -
    -
    SWITCHING
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    Surface Mount
    SILICON
    -55°C~150°C TJ
    PowerTrench®
    MOSFET (Metal Oxide)
    3W Ta
    N-Channel
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    1.8V 4.5V
    ±8V
    23A
    YES
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    0.0035Ohm
    60A
    20V
    FDS6682 vs FDS6064N7
  • FDS6670AS
    FDS6670AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    Tape & Reel (TR)
    2005
    e4
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    9MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    -
    30V
    -
    DUAL
    GULL WING
    13.5A
    1
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    SWITCHING
    5ns
    -
    -
    18 ns
    27 ns
    13.5A
    -
    20V
    30V
    -
    -
    -
    -
    -
    -
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin
    Surface Mount
    SILICON
    -55°C~150°C TJ
    PowerTrench®, SyncFET™
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS6682 vs FDS6670AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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