FDS6680AS

Fairchild/ON Semiconductor FDS6680AS

Part Number:
FDS6680AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481755-FDS6680AS
Description:
MOSFET N-CH 30V 11.5A 8SOIC
ECAD Model:
Datasheet:
FDS6680AS

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Specifications
Fairchild/ON Semiconductor FDS6680AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6680AS.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • Published
    2005
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    10MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -11.5A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5mW
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 11.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    1240pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    11.5A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Recovery Time
    18 ns
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6680AS Description
The FDS6680AS is a 30V N-channel PowerTrench? SyncFET having been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDS6680AS is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.

FDS6680AS Features
11.5A, 30V
RDS(ON) = 8.0 mΩ @ VGS = 10V
RDS(ON) = 10.5 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability

FDS6680AS Applications
DC/DC Converters
Low Side Notebook
Cellular phones 
Laptop computers
Photovoltaic systems 
FDS6680AS More Descriptions
FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
Product Comparison
The three parts on the right have similar specifications to FDS6680AS.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Nominal Vgs
    View Compare
  • FDS6680AS
    FDS6680AS
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2005
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    10MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -11.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5mW
    11 ns
    N-Channel
    SWITCHING
    10m Ω @ 11.5A, 10V
    3V @ 1mA
    1240pF @ 15V
    11.5A Ta
    30nC @ 10V
    12ns
    4.5V 10V
    ±20V
    11 ns
    18 ns
    11.5A
    1.5V
    20V
    30V
    18 ns
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
  • FDS6681Z
    -
    -
    -
    -
    -
    SO-8
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
  • FDS6690AS
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2004
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    12MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    10A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    8 ns
    N-Channel
    SWITCHING
    12m Ω @ 10A, 10V
    3V @ 1mA
    910pF @ 15V
    10A Ta
    23nC @ 10V
    5ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    10A
    1.6V
    20V
    30V
    -
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    1.6 V
  • FDS6670AS
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2005
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    9MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    13.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    5ns
    4.5V 10V
    ±20V
    18 ns
    27 ns
    13.5A
    -
    20V
    30V
    -
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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