Fairchild/ON Semiconductor FDS6680AS
- Part Number:
- FDS6680AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481755-FDS6680AS
- Description:
- MOSFET N-CH 30V 11.5A 8SOIC
- Datasheet:
- FDS6680AS
Fairchild/ON Semiconductor FDS6680AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6680AS.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- Published2005
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance10MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-11.5A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5mW
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10m Ω @ 11.5A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1240pF @ 15V
- Current - Continuous Drain (Id) @ 25°C11.5A Ta
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)11.5A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Recovery Time18 ns
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6680AS Description
The FDS6680AS is a 30V N-channel PowerTrench? SyncFET having been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDS6680AS is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.
FDS6680AS Features
11.5A, 30V
RDS(ON) = 8.0 mΩ @ VGS = 10V
RDS(ON) = 10.5 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability
FDS6680AS Applications
DC/DC Converters
Low Side Notebook
Cellular phones
Laptop computers
Photovoltaic systems
The FDS6680AS is a 30V N-channel PowerTrench? SyncFET having been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDS6680AS is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.
FDS6680AS Features
11.5A, 30V
RDS(ON) = 8.0 mΩ @ VGS = 10V
RDS(ON) = 10.5 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability
FDS6680AS Applications
DC/DC Converters
Low Side Notebook
Cellular phones
Laptop computers
Photovoltaic systems
FDS6680AS More Descriptions
FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
The three parts on the right have similar specifications to FDS6680AS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeNominal VgsView Compare
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FDS6680ASACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2005e4yesActive1 (Unlimited)8EAR9910MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power-30VMOSFET (Metal Oxide)DUALGULL WING-11.5A12.5W TaSingleENHANCEMENT MODE2.5mW11 nsN-ChannelSWITCHING10m Ω @ 11.5A, 10V3V @ 1mA1240pF @ 15V11.5A Ta30nC @ 10V12ns4.5V 10V±20V11 ns18 ns11.5A1.5V20V30V18 ns1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free--
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-----SO-8----Tape & Reel (TR)--------------------------------------------RoHS Compliant--
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ACTIVE (Last Updated: 1 day ago)18 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns4.5V 10V±20V6 ns25 ns10A1.6V20V30V-1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free1.6 V
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ACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2005e4yesActive1 (Unlimited)8EAR999MOhmNickel/Palladium/Gold (Ni/Pd/Au)-30VMOSFET (Metal Oxide)DUALGULL WING13.5A12.5W TaSingleENHANCEMENT MODE2.5W10 nsN-ChannelSWITCHING9m Ω @ 13.5A, 10V3V @ 1mA1540pF @ 15V13.5A Ta38nC @ 10V5ns4.5V 10V±20V18 ns27 ns13.5A-20V30V-1.5mm5mm4mm-NoROHS3 CompliantLead Free-
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