Fairchild/ON Semiconductor FDS6679Z

Name: FDS6679Z
Brand: Fairchild/ON Semiconductor
SKU: 2488730-FDS6679Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6679Z

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488730-FDS6679Z

Description:: MOSFET P-CH 30V 13A 8SOIC

ECAD Model:

Datasheet:: FDS6679Z

Specifications

Fairchild/ON Semiconductor FDS6679Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6679Z.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3.803pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13A Ta
Gate Charge (Qg) (Max) @ Vgs
94nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
20V, -25V
Drain Current-Max (Abs) (ID)
13A
Drain-source On Resistance-Max
0.009Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

FDS6679Z Overview
A device's maximum input capacitance is 3.803pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 13A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

FDS6679Z Features
a 30V drain to source voltage (Vdss)

FDS6679Z Applications
There are a lot of Rochester Electronics, LLC
FDS6679Z applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

FDS6679Z More Descriptions

Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SO-8 ;RoHS Compliant: Yes
MOSFET, P; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:30V; Current, Id Cont:13A; On State Resistance:7.2mohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.7V; Case Style:SOIC; Termination Type:SMD; Transistor Case Style:SOIC
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Product Comparison

The three parts on the right have similar specifications to FDS6679Z.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Reach Compliance Code

Case Connection

Pulsed Drain Current-Max (IDM)

View Compare
FDS6679Z

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

9m Ω @ 13A, 10V

3V @ 250μA

3.803pF @ 15V

13A Ta

94nC @ 10V

30V

4.5V 10V

20V, -25V

13A

0.009Ohm

30V

ROHS3 Compliant

-

-

-

-
FDS6064N3

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

4m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

20V

1.8V 4.5V

±8V

23A

0.004Ohm

20V

ROHS3 Compliant

unknown

DRAIN

-

FDS6679Z vs FDS6064N3
FDS6688

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 250μA

3.888pF @ 15V

16A Ta

56nC @ 5V

30V

4.5V 10V

±20V

16A

0.006Ohm

30V

ROHS3 Compliant

unknown

-

-

FDS6679Z vs FDS6688
FDS6064N7

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

20V

1.8V 4.5V

±8V

23A

0.0035Ohm

20V

ROHS3 Compliant

-

DRAIN

60A

FDS6679Z vs FDS6064N7