Fairchild/ON Semiconductor FDS6679AZ

Name: FDS6679AZ
Brand: Fairchild/ON Semiconductor
SKU: 2478322-FDS6679AZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6679AZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478322-FDS6679AZ

Description:: MOSFET P-CH 30V 13A 8-SOIC

ECAD Model:

Datasheet:: FDS6679AZ

Specifications

Fairchild/ON Semiconductor FDS6679AZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6679AZ.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2008
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
9.3MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-13A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
13 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.3m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3845pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13A Ta
Gate Charge (Qg) (Max) @ Vgs
96nC @ 10V
Rise Time
15ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
92 ns
Turn-Off Delay Time
210 ns
Continuous Drain Current (ID)
-13A
Threshold Voltage
-1.9V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Nominal Vgs
-1.9 V
Feedback Cap-Max (Crss)
745 pF
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6679AZ Description
The FDS6679AZ is a P-channel MOSFET produced using an advanced PowerTrench? process. The FDS6679AZ has been specially tailored to minimize the ON-state resistance. The onsemi FDS6679AZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS6679AZ is in the SOIC-8 package with 2.5W power dissipation.

FDS6679AZ Features
Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High-performance trench technology for extremely lowrDS(on)
High power and current handling capability

FDS6679AZ Applications
Notebook Computers
Portable Battery Packs
Datacom module
Wired networking
Wearables (non-medical)

FDS6679AZ More Descriptions

Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
P-Channel 30 V 9.3 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Product Comparison

The three parts on the right have similar specifications to FDS6679AZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Case Connection

Pulsed Drain Current-Max (IDM)

View Compare
FDS6679AZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2008

e4

yes

Active

1 (Unlimited)

8

EAR99

9.3MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-13A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

13 ns

P-Channel

SWITCHING

9.3m Ω @ 13A, 10V

3V @ 250μA

3845pF @ 15V

13A Ta

96nC @ 10V

15ns

30V

4.5V 10V

±25V

92 ns

210 ns

-13A

-1.9V

25V

-30V

-1.9 V

745 pF

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6688

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 250μA

3.888pF @ 15V

16A Ta

56nC @ 5V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

16A

0.006Ohm

30V

-

-

FDS6679AZ vs FDS6688
FDS6688S

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 1mA

3.29pF @ 15V

16A Ta

78nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

-

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

16A

0.006Ohm

30V

-

-

FDS6679AZ vs FDS6688S
FDS6064N7

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

NICKEL PALLADIUM GOLD

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

-

20V

1.8V 4.5V

±8V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

-

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

23A

0.0035Ohm

20V

DRAIN

60A

FDS6679AZ vs FDS6064N7