Fairchild/ON Semiconductor FDS6675

Name: FDS6675
Brand: Fairchild/ON Semiconductor
SKU: 2484164-FDS6675
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6675

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484164-FDS6675

Description:: MOSFET P-CH 30V 11A 8-SOIC

ECAD Model:

Datasheet:: FDS6675

Part Pictures

Specifications

Fairchild/ON Semiconductor FDS6675 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6675.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
14mOhm
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-11A
Base Part Number
FDS6675
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
12 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3000pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
42nC @ 5V
Rise Time
16ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
100 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
-1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Nominal Vgs
-1.7 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6675 Description
This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FDS6675 Features
Low gate charge (30nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
11 A, -30 V

FDS6675 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDS6675 More Descriptions

P-Channel PowerTrench™ MOSFET, Logic Level, -30V, -11A, 14mΩ
Mosfet, P, So-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W Rohs Compliant: Yes |Onsemi FDS6675.
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:11A; Current Id Max:-11A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6675; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-3V

Product Comparison

The three parts on the right have similar specifications to FDS6675.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Case Connection

Pulsed Drain Current-Max (IDM)

Contact Plating

Height

Length

Width

View Compare
FDS6675

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

1999

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

14mOhm

Tin (Sn)

LOGIC LEVEL COMPATIBLE

Other Transistors

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-11A

FDS6675

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

12 ns

P-Channel

SWITCHING

14m Ω @ 11A, 10V

3V @ 250μA

3000pF @ 15V

11A Ta

42nC @ 5V

16ns

30V

4.5V 10V

±20V

100 ns

50 ns

11A

-1.7V

20V

-30V

-30V

-1.7 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6688S

Fairchild/ON Semiconductor

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

-

MATTE TIN

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 1mA

3.29pF @ 15V

16A Ta

78nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

16A

0.006Ohm

30V

-

-

-

-

-

-

FDS6675 vs FDS6688S
FDS6064N7

Fairchild/ON Semiconductor

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

-

NICKEL PALLADIUM GOLD

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

-

20V

1.8V 4.5V

±8V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

23A

0.0035Ohm

20V

DRAIN

60A

-

-

-

-

FDS6675 vs FDS6064N7
FDS6670AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

2005

e4

yes

Active

1 (Unlimited)

8

-

EAR99

9MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

-

-

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

13.5A

-

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

10 ns

N-Channel

SWITCHING

9m Ω @ 13.5A, 10V

3V @ 1mA

1540pF @ 15V

13.5A Ta

38nC @ 10V

5ns

-

4.5V 10V

±20V

18 ns

27 ns

13.5A

-

20V

30V

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

Tin

1.5mm

5mm

4mm

FDS6675 vs FDS6670AS