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FDS6672A

Fairchild/ON Semiconductor FDS6672A

Part Number:
FDS6672A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2488680-FDS6672A
Description:
MOSFET N-CH 30V 12.5A 8SOIC
ECAD Model:
Datasheet:
FDS6672A

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Specifications
Fairchild/ON Semiconductor FDS6672A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6672A.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5.07pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    46nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±12V
  • Drain Current-Max (Abs) (ID)
    12.5A
  • Drain-source On Resistance-Max
    0.008Ohm
  • Pulsed Drain Current-Max (IDM)
    50A
  • DS Breakdown Voltage-Min
    30V
  • RoHS Status
    ROHS3 Compliant
Description
FDS6672A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5.07pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDS6672A Features
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)


FDS6672A Applications
There are a lot of Rochester Electronics, LLC
FDS6672A applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDS6672A More Descriptions
MOSFET N-CH 30V 12.5A 8SOIC
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12.5A; Drain Source On Resistance @ 10V:0.008ohm; Leaded Process Compatible:Yes; Package/Case:8-SOIC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to FDS6672A.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Case Connection
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Published
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    View Compare
  • FDS6672A
    FDS6672A
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    unknown
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    8m Ω @ 14A, 10V
    2V @ 250μA
    5.07pF @ 15V
    12.5A Ta
    46nC @ 4.5V
    30V
    4.5V 10V
    ±12V
    12.5A
    0.008Ohm
    50A
    30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6162N7
    FDS6162N7
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    NICKEL PALLADIUM GOLD
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    3W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    5.521pF @ 10V
    23A Ta
    73nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    23A
    0.0035Ohm
    60A
    20V
    ROHS3 Compliant
    DRAIN
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS6672A vs FDS6162N7
  • FDS6690AS
    FDS6690AS
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e4
    yes
    Active
    1 (Unlimited)
    8
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    12m Ω @ 10A, 10V
    3V @ 1mA
    910pF @ 15V
    10A Ta
    23nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    8
    130mg
    2004
    EAR99
    12MOhm
    FET General Purpose Power
    30V
    10A
    Single
    2.5W
    8 ns
    5ns
    6 ns
    25 ns
    10A
    1.6V
    20V
    30V
    1.6 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    Lead Free
    -
    FDS6672A vs FDS6690AS
  • FDS6670AS
    FDS6670AS
    Fairchild/ON Semiconductor
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e4
    yes
    Active
    1 (Unlimited)
    8
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    8
    130mg
    2005
    EAR99
    9MOhm
    -
    30V
    13.5A
    Single
    2.5W
    10 ns
    5ns
    18 ns
    27 ns
    13.5A
    -
    20V
    30V
    -
    1.5mm
    5mm
    4mm
    -
    No
    Lead Free
    Tin
    FDS6672A vs FDS6670AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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