Fairchild/ON Semiconductor FDS6614A
- Part Number:
- FDS6614A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2488679-FDS6614A
- Description:
- MOSFET N-CH 30V 9.3A 8SOIC
- Datasheet:
- FDS6614A
Fairchild/ON Semiconductor FDS6614A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6614A.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs18m Ω @ 9.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.16pF @ 15V
- Current - Continuous Drain (Id) @ 25°C9.3A Ta
- Gate Charge (Qg) (Max) @ Vgs17nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)9.3A
- Drain-source On Resistance-Max0.018Ohm
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDS6614A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.16pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [9.3A] according to its drain current.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDS6614A Features
a 30V drain to source voltage (Vdss)
FDS6614A Applications
There are a lot of Rochester Electronics, LLC
FDS6614A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.16pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [9.3A] according to its drain current.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDS6614A Features
a 30V drain to source voltage (Vdss)
FDS6614A Applications
There are a lot of Rochester Electronics, LLC
FDS6614A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDS6614A More Descriptions
Trans MOSFET N-CH 30V 9.3A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Small Signal Field-Effect Transistor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The three parts on the right have similar specifications to FDS6614A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightPublishedECCN CodeResistanceSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeCase ConnectionPulsed Drain Current-Max (IDM)View Compare
-
FDS6614ASurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8MATTE TINLOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WING260308R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING18m Ω @ 9.3A, 10V3V @ 250μA1.16pF @ 15V9.3A Ta17nC @ 5V30V4.5V 10V±20V9.3A0.018Ohm30VROHS3 Compliant---------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)8Nickel/Palladium/Gold (Ni/Pd/Au)-MOSFET (Metal Oxide)DUALGULL WING-----1-2.5W TaENHANCEMENT MODEP-ChannelSWITCHING24m Ω @ 8A, 4.5V1.5V @ 250μA2694pF @ 10V8A Ta36nC @ 4.5V20V2.5V 4.5V±8V8A--ROHS3 CompliantACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface Mount8130mg2001EAR9924MOhmOther Transistors-20V-8ASingle2.5W12 ns9ns57 ns124 ns8A-700mV8V-20V-20V-700 mV1.5mm5mm4mmNo SVHCNoLead Free--
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLD-MOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEN-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V20V1.8V 4.5V±8V23A0.0035Ohm20VROHS3 Compliant------------------------------DRAIN60A
-
-SO-8---Tape & Reel (TR)---------------------------------RoHS Compliant--------------------------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 November 2023
What is W25Q128JVSIQ Serial Flash Memory?
Ⅰ. W25Q128JVSIQ overviewⅡ. Manufacturer of W25Q128JVSIQⅢ. Symbol, footprint and pin configuration of W25Q128JVSIQⅣ. Features of W25Q128JVSIQⅤ. Working principle of W25Q128JVSIQⅥ. Technical parameters of W25Q128JVSIQⅦ. Advantages and disadvantages of... -
20 November 2023
Comparing the DHT11 and DHT22 Temperature and Humidity Sensor
Ⅰ. What is a temperature sensor?Ⅱ. DHT11 vs DHT22: OverviewⅢ. DHT11 vs DHT22: Symbol and footprintⅣ. DHT11 vs DHT22: FeaturesⅤ. DHT11 vs DHT22: Pin configurationⅥ. DHT11 vs DHT22:... -
21 November 2023
MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050
Ⅰ. Overview of MCP2551 transceiverⅡ. Manufacturer of MCP2551 transceiverⅢ. Features of MCP2551 transceiverⅣ. Working principle of MCP2551 transceiverⅤ. Block diagram of MCP2551 transceiverⅥ. What is the difference between... -
21 November 2023
AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle
Ⅰ. Overview of AD9361 RF transceiverⅡ. Manufacturer of AD9361 RF transceiverⅢ. Block diagram of AD9361 RF transceiverⅣ. Structure and working principle of AD9361 RF transceiverⅤ. Features of AD9361...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.