FDS6576

Fairchild/ON Semiconductor FDS6576

Part Number:
FDS6576
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2484189-FDS6576
Description:
MOSFET P-CH 20V 11A 8SOIC
ECAD Model:
Datasheet:
FDS6576

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Specifications
Fairchild/ON Semiconductor FDS6576 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6576.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    14MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -11A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    18 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 11A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4044pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 4.5V
  • Rise Time
    17ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    79 ns
  • Turn-Off Delay Time
    124 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    -830mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Dual Supply Voltage
    -20V
  • Nominal Vgs
    -830 mV
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6576 Description
FDS6576 is a P-channel Power MOSFET from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of FDS6576 is -55°C~150°C TJ and its maximum power dissipation are 2.5W. This P-Channel 2.5V specified MOSFET is in a rugged gate version of an advanced Power Trench? process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

FDS6576 Features
-11 A, -20 V.
RDS(ON) = 0.014 Ω @ VGS = -4.5 V
RDS(ON) = 0.020 Ω @ VGS = -2.5 V
Extended VGSS range ( -12V) for battery applications
Low gate charge (44nC typical)
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
RoHS Compliant

FDS6576 Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Management
FDS6576 More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ
Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Product Comparison
The three parts on the right have similar specifications to FDS6576.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Case Connection
    Pulsed Drain Current-Max (IDM)
    View Compare
  • FDS6576
    FDS6576
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    14MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -11A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    18 ns
    P-Channel
    SWITCHING
    14m Ω @ 11A, 4.5V
    1.5V @ 250μA
    4044pF @ 10V
    11A Ta
    60nC @ 4.5V
    17ns
    20V
    2.5V 4.5V
    ±12V
    79 ns
    124 ns
    11A
    -830mV
    12V
    -20V
    -20V
    -830 mV
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6688S
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6m Ω @ 16A, 10V
    3V @ 1mA
    3.29pF @ 15V
    16A Ta
    78nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    16A
    0.006Ohm
    30V
    -
    -
  • FDS6064N7
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    -
    20V
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    23A
    0.0035Ohm
    20V
    DRAIN
    60A
  • FDS6690AS
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2004
    e4
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    12MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    10A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    8 ns
    N-Channel
    SWITCHING
    12m Ω @ 10A, 10V
    3V @ 1mA
    910pF @ 15V
    10A Ta
    23nC @ 10V
    5ns
    -
    4.5V 10V
    ±20V
    6 ns
    25 ns
    10A
    1.6V
    20V
    30V
    -
    1.6 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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