Fairchild/ON Semiconductor FDS6576
- Part Number:
- FDS6576
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484189-FDS6576
- Description:
- MOSFET P-CH 20V 11A 8SOIC
- Datasheet:
- FDS6576
Fairchild/ON Semiconductor FDS6576 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6576.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2006
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance14MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-11A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time18 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14m Ω @ 11A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4044pF @ 10V
- Current - Continuous Drain (Id) @ 25°C11A Ta
- Gate Charge (Qg) (Max) @ Vgs60nC @ 4.5V
- Rise Time17ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)79 ns
- Turn-Off Delay Time124 ns
- Continuous Drain Current (ID)11A
- Threshold Voltage-830mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage-20V
- Nominal Vgs-830 mV
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6576 Description
FDS6576 is a P-channel Power MOSFET from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of FDS6576 is -55°C~150°C TJ and its maximum power dissipation are 2.5W. This P-Channel 2.5V specified MOSFET is in a rugged gate version of an advanced Power Trench? process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
FDS6576 Features
-11 A, -20 V.
RDS(ON) = 0.014 Ω @ VGS = -4.5 V
RDS(ON) = 0.020 Ω @ VGS = -2.5 V
Extended VGSS range ( -12V) for battery applications
Low gate charge (44nC typical)
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
RoHS Compliant
FDS6576 Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Management
FDS6576 is a P-channel Power MOSFET from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of FDS6576 is -55°C~150°C TJ and its maximum power dissipation are 2.5W. This P-Channel 2.5V specified MOSFET is in a rugged gate version of an advanced Power Trench? process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
FDS6576 Features
-11 A, -20 V.
RDS(ON) = 0.014 Ω @ VGS = -4.5 V
RDS(ON) = 0.020 Ω @ VGS = -2.5 V
Extended VGSS range ( -12V) for battery applications
Low gate charge (44nC typical)
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
RoHS Compliant
FDS6576 Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Management
FDS6576 More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ
Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
The three parts on the right have similar specifications to FDS6576.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinCase ConnectionPulsed Drain Current-Max (IDM)View Compare
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FDS6576ACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e4yesActive1 (Unlimited)8SMD/SMTEAR9914MOhmNickel/Palladium/Gold (Ni/Pd/Au)Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-11A12.5W TaSingleENHANCEMENT MODE2.5W18 nsP-ChannelSWITCHING14m Ω @ 11A, 4.5V1.5V @ 250μA4044pF @ 10V11A Ta60nC @ 4.5V17ns20V2.5V 4.5V±12V79 ns124 ns11A-830mV12V-20V-20V-830 mV1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-------------
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----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8---MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-12.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 1mA3.29pF @ 15V16A Ta78nC @ 10V-30V4.5V 10V±20V-------------ROHS3 Compliant-YES260NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE16A0.006Ohm30V--
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----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesObsolete1 (Unlimited)8---NICKEL PALLADIUM GOLD--MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V-20V1.8V 4.5V±8V-------------ROHS3 Compliant-YES260NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE23A0.0035Ohm20VDRAIN60A
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ACTIVE (Last Updated: 1 day ago)18 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8-EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns-4.5V 10V±20V6 ns25 ns10A1.6V20V30V-1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free------------
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